Effect of thickness on optoelectrical properties of Nb-doped indium tin oxide thin films deposited by RF magnetron sputtering

被引：3
|
作者：
Li S.-N. [1 ]
Ma R.-X. [1 ]
Ma C.-H. [1 ]
Li D.-R. [1 ]
Xiao Y.-Q. [1 ]
He L.-W. [1 ]
Zhu H.-M. [1 ]
机构：
[1] Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing, Beijing
来源：
Optoelectronics Letters | 2013年 / 9卷 / 3期
关键词：
Carrier Concentration; Hall Mobility; Indium Oxide; Flat Panel Display; Radio Frequency Magnetron;
D O I：
10.1007/s11801-013-2411-1
中图分类号：
学科分类号：
摘要：
Niobium-doped indium tin oxide (ITO:Nb) thin films are prepared on glass substrates with various film thicknesses by radio frequency (RF) magnetron sputtering from one piece of ceramic target material. The effects of thickness (60-360 nm) on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction (XRD), ultraviolet (UV)-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented (400) direction. The lowest resistivity of the films without any heat treatment is 3. 1×10-4Ω·cm-1, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17. 6 N·S and 1. 36×1021 cm-3, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3. 48 eV to 3. 62 eV. © 2013 Tianjin University of Technology and Springer-Verlag Berlin Heidelberg.
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页码：198 / 200
页数：2
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