A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel

被引：0
|
作者：
贾泽 [1 ]
徐建龙 [2 ]
吴肖 [1 ]
张明明 [2 ]
刘俊杰 [3 ]
机构：
[1] School of Microelectronics and Solid-State Electronics,University of Electronic Science and Technology of China
[2] Institute of Microelectronics,Tsinghua National Laboratory for Information Science and Technology,Tsinghua University
[3] Department of Electrical Engineering and Computer Science,University of Central Florida
来源：
Chinese Physics Letters | 2015年 / 32卷 / 02期
基金：
中央高校基本科研业务费专项资金资助;
关键词：
PZT; AZO; Pt; A Back-Gated Ferroelectric Field-Effect Transistor with an Al-Doped Zinc Oxide Channel; Al;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
We report a back-gated metal-oxide-ferroelectric-metal(MOFM) field-effect transistor(FET) with lead zirconate titanate(PZT) material,in which an Al doped zinc oxide(AZO) channel layer with an optimized doping concentration of 1%is applied to reduce the channel resistance of the channel layer,thus guaranteeing a large enough load capacity of the transistor.The hysteresis loops of the Pt/PZT/AZO/Ti/Pt capacitor are measured and compared with a Pt/PZT/Pt capacitor,indicating that the remnant polarization is almost 40μC/cm2and the polarization is saturated at 20 V.The measured capacitance-voltage properties are analyzed as a result of the electron depletion and accumulation switching operation conducted by the modulation of PZT on AZO channel resistance caused by the switchable remnant polarization of PZT.The switching properties of the AZO channel layer are also proved by the current-voltage transfer curves measured in the back-gated MOFM ferroelectric FET,which also show a drain current switching ratio up to about 100 times.
引用
收藏
页码：156 / 160
页数：5
相关论文
共 50 条
  • [21] Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film
    Kim, Woo Young
    Jeon, Gwang-Jae
    Kang, In-Ku
    Bin Shim, Hyun
    Lee, Hee Chul
    [J]. THIN SOLID FILMS, 2015, 591 : 1 - 7
  • [22] Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor
    Park, Nahee
    Kang, Haeyong
    Park, Jeongmin
    Lee, Yourack
    Yun, Yoojoo
    Lee, Jeong-Ho
    Lee, Sang-Goo
    Lee, Young Hee
    Suh, Dongseok
    [J]. ACS NANO, 2015, 9 (11) : 10729 - 10736
  • [23] High Speed Memory Operation in Channel-Last, Back-gated Ferroelectric Transistors
    Sharma, Abhishek A.
    Doyle, Brian
    Yoo, Hui Jae
    Tung, I-Cheng
    Kavalieros, Jack
    Metz, Matthew, V
    Reshotko, Miriam
    Majhi, Prashant
    Brown-Heft, Tobias
    Chen, Yu-Jin
    Le, Van H.
    [J]. 2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2020,
  • [24] High-Performance Top-Gated and Double-Gated Oxide-Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect
    Chen, Chun-Kuei
    Hooda, Sonu
    Fang, Zihang
    Lal, Manohar
    Xu, Zefeng
    Pan, Jieming
    Tsai, Shih-Hao
    Zamburg, Evgeny
    Thean, Aaron Voon-Yew
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2023, 70 (04) : 2098 - 2105
  • [25] High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors
    Abderrahmane, A.
    Ko, P. J.
    Thu, T. V.
    Ishizawa, S.
    Takamura, T.
    Sandhu, A.
    [J]. NANOTECHNOLOGY, 2014, 25 (36)
  • [26] Effect of intrinsic zinc oxide coating on the properties of Al-doped zinc oxide nanorod arrays
    Saidi, S. A.
    Mamat, M. H.
    Ismail, A. S.
    Malek, M. F.
    Yusoff, M. M.
    Sin, N. D. Md.
    Zoolfakar, A. S.
    Khusaimi, Z.
    Rusop, M.
    [J]. 8TH INTERNATIONAL CONFERENCE ON NANOSCIENCE AND NANOTECHNOLOGY 2017 (NANO-SCITECH 2017), 2018, 1963
  • [27] DNA/AuNP-Graphene Back-gated Field Effect Transistor as a Biosensor for Lead (II) Ion Detection
    Chee, Ling Hoe
    Kumar, Pradeep
    Kang, Chun Hong
    Burhanudin, Zainal A.
    [J]. PROCEEDINGS OF THE 2017 IEEE REGIONAL SYMPOSIUM ON MICRO AND NANOELECTRONICS (RSM), 2017, : 127 - 130
  • [28] Field-effect transistor based on ZnO:Li thin film with ferroelectric channel
    Poghosyan, A. R.
    Hovsepyan, R. K.
    Aghamalyan, N. R.
    Kafadaryan, Y. A.
    Ayvazyan, H. L.
    Mnatsakanyan, H. G.
    Petrosyan, S. I.
    [J]. PHOTONIC FIBER AND CRYSTAL DEVICES: ADVANCES IN MATERIALS AND INNOVATIONS IN DEVICE APPLICATIONS XVI, 2022, 12229
  • [29] Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
    Schrott, AG
    Misewich, JA
    Nagarajan, V
    Ramesh, R
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4770 - 4772
  • [30] The ferroelectric field-effect transistor with negative capacitance
    I. Luk’yanchuk
    A. Razumnaya
    A. Sené
    Y. Tikhonov
    V. M. Vinokur
    [J]. npj Computational Materials, 8
12345