High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

被引：149
|
作者：
Abderrahmane, A. [1 ]
Ko, P. J. [2 ]
Thu, T. V. [2 ]
Ishizawa, S. [1 ]
Takamura, T. [2 ]
Sandhu, A. [1 ,2 ]
机构：
[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan
[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan
来源：
NANOTECHNOLOGY | 2014年 / 25卷 / 36期
关键词：
2D materials; optoelectronic; phototransistor; photodetector; molybdenum diselenide; TRANSISTORS; MOBILITY;
D O I：
10.1088/0957-4484/25/36/365202
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm(2) V-1 s(-1) at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW(-1) and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications.
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页数：5
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