High photosensitivity few-layered MoSe2 back-gated field-effect phototransistors

被引：149

作者：

Abderrahmane, A. ^{[1
]}

Ko, P. J. ^{[2
]}

Thu, T. V. ^{[2
]}

Ishizawa, S. ^{[1
]}

Takamura, T. ^{[2
]}

Sandhu, A. ^{[1
,2
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi 4418580, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst EIIRIS, Toyohashi, Aichi 4418580, Japan

来源：

NANOTECHNOLOGY | 2014年 / 25卷 / 36期

关键词：

2D materials; optoelectronic; phototransistor; photodetector; molybdenum diselenide; TRANSISTORS; MOBILITY;

D O I：

10.1088/0957-4484/25/36/365202

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this paper, we report on the fabrication and optoelectronic properties of high sensitive phototransistors based on few-layered MoSe2 back-gated field-effect transistors, with a mobility of 19.7 cm(2) V-1 s(-1) at room temperature. We obtained an ultrahigh photoresponsivity of 97.1 AW(-1) and an external quantum efficiency (EQE) of 22 666% using 532 nm laser excitation at room temperature. The photoresponsivity was improved near the threshold gate voltage; however, the selection of the silicon dioxide as a gate oxide represents a limiting factor in the ultimate performance. Thanks to their high photoresponsivity and external quantum efficiency, the few-layered MoSe2-based devices are promising for photoelectronic applications.

引用

页数：5

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