PDSOI DTMOS for analog and RF application

被引：0
|
作者：
王一奇 [1 ,2 ]
刘梦新 [1 ,2 ]
毕津顺 [1 ,2 ]
韩郑生 [1 ,2 ]
机构：
[1] Institute of Microelectronics,Chinese Academy of Sciences
[2] Key Laboratory of Microelectronics Devices ＆ Integrated Technology,Chinese Academy of Sciences
来源：
半导体学报 | 2011年 / 32卷 / 05期
关键词：
silicon-on-insulator; dynamic threshold voltage; analog and RF characteristics;
D O I：
暂无
中图分类号：
TN405 [制造工艺];
学科分类号：
080903 ; 1401 ;
摘要：
Based on the platform of 0.35μm PDSOI CMOS process technology,the partially depleted siliconon -insulator dynamic threshold voltage（PDSOI DT） NMOS with an H-gate was implemented.The analog characteristics and RF characteristics of the gate-body contacted dynamic threshold voltage H-gate NMOS and conventional H-gate NMOS were performed and compared.Furthermore,the fundamental operation principle and physical mechanism of the PDSOI H-gate DTMOS compared with the conventional H-gate NMOS are analyzed in detail.The results indicate that the cutoff frequency can reach 40 GHz and the maximum oscillation frequency 29.43 GHz as V;= 0.7 V and V;= 1V.
引用
收藏
页码：52 / 56
页数：5
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