A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers

被引：0

作者：

Vahid BahramiYekta ^{[1
]}

Hassan Kaatuzian ^{[1
]}

机构：

[1] Photonics Research Laboratory(P.R.L),Department of Electrical Engineering,Amirkabir University of Technology

来源：

Communications in Theoretical Physics | 2010年 / 54卷 / 09期

关键词：

multiple quantum well laser; semiconductor laser; strain in barrier; uncooled;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

In this study we investigate strain effect in barriers of 1.3 μm AlGaInAs-InP uncooled multiple quantum welllasers.Single effective mass and Kohn-Luttinger Hamiltonian equations have been solved to obtain quantum states andenvelope wave functions in the structure.In the case of unstrained barriers,our simulations results have good agreementwith a real device fabricated and presented in one of the references.Our main work is proposal of 0.2% compressivestrain in the structure Barriers that causes significant reduction in Leakage current density and Auger current densitycharacteristics in 85℃.20% improvement in mode gain-current density characteristic is also obtained in 85℃.

引用

页码：529 / 535

页数：7

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