Optimized High-Voltage Analog Switch and Its Control Circuit Based on Silicon-on-Insulator Technology

被引：0

作者：

Li, Zhuze ^{[1
]}

Lai, Xinquan ^{[1
]}

Ding, Chentao ^{[1
]}

Jin, Dinghai ^{[2
]}

Wang, Jiabao ^{[1
]}

Liu, Chen ^{[2
]}

机构：

[1] Xidian Univ, Sch Elect Engn, Xian 710071, Peoples R China

[2] Shenzhen Changyuntong Semicond Co Ltd, Shenzhen 518133, Peoples R China

来源：

ELECTRONICS | 2024年 / 13卷 / 23期

关键词：

SOI process; high-voltage analog switch; gate-source voltage holding; FIELD-MOS FETS; LOW VGS NLDMOS;

D O I：

10.3390/electronics13234601

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In recent years, high-voltage analog switches have been widely used in various fields. To handle complex use scenarios, high-voltage analog switches need to achieve the goals of low on-resistance, high isolation performance, high response speed, and high voltage withstand range. Traditional high-voltage analog switches have issues such as low integration, large area, and slow response speed. This paper uses a super junction MOSFET (SJ-MOS) with a 0.18 mu m SOI process and a solid-state relay (SSR) structure to implement a high-voltage analog switch. A gate drive circuit suitable for low gate-source breakdown voltage is proposed to maintain the gate-source voltage, achieving a low on-resistance of 24 Omega and high isolation. Compared with traditional high-voltage analog switches, it achieves higher performance with a smaller area.

引用

页数：19

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