Optimized High-Voltage Analog Switch and Its Control Circuit Based on Silicon-on-Insulator Technology

被引：0
|
作者：
Li, Zhuze [1 ]
Lai, Xinquan [1 ]
Ding, Chentao [1 ]
Jin, Dinghai [2 ]
Wang, Jiabao [1 ]
Liu, Chen [2 ]
机构：
[1] Xidian Univ, Sch Elect Engn, Xian 710071, Peoples R China
[2] Shenzhen Changyuntong Semicond Co Ltd, Shenzhen 518133, Peoples R China
来源：
ELECTRONICS | 2024年 / 13卷 / 23期
关键词：
SOI process; high-voltage analog switch; gate-source voltage holding; FIELD-MOS FETS; LOW VGS NLDMOS;
D O I：
10.3390/electronics13234601
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
In recent years, high-voltage analog switches have been widely used in various fields. To handle complex use scenarios, high-voltage analog switches need to achieve the goals of low on-resistance, high isolation performance, high response speed, and high voltage withstand range. Traditional high-voltage analog switches have issues such as low integration, large area, and slow response speed. This paper uses a super junction MOSFET (SJ-MOS) with a 0.18 mu m SOI process and a solid-state relay (SSR) structure to implement a high-voltage analog switch. A gate drive circuit suitable for low gate-source breakdown voltage is proposed to maintain the gate-source voltage, achieving a low on-resistance of 24 Omega and high isolation. Compared with traditional high-voltage analog switches, it achieves higher performance with a smaller area.
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页数：19
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