A 2-6 GHz Driver Amplifier with 27 dBm Output Power and 35 dB Gain

被引：0
|
作者：
Cagdas, Engin [1 ]
Kizilbey, Oguzhan [2 ]
Yazgi, Metin [1 ]
机构：
[1] Istanbul Tech Univ, Elekt & Haberlesme Muhendisligi, Istanbul, Turkiye
[2] Tubitak Ulusal Metrol Enstitusu, Kocaeli, Turkiye
来源：
32ND IEEE SIGNAL PROCESSING AND COMMUNICATIONS APPLICATIONS CONFERENCE, SIU 2024 | 2024年
关键词：
GaN (HEMT); power amplifier; driver amplifier;
D O I：
10.1109/SIU61531.2024.10600910
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a wideband driver amplifier (DA) with flat gain is presented for driver stage in high power amplifier. The presented driver amplifier consists of 11 dB gain block, positive slope equalizer and power amplifier stage with 24 dB small signal gain. The designed DA has 500 mW (27 dBm) output power and operates along 2-6 GHz frequency band. This DA is designed to be implemented on the Rogers RT5870 dielectric substrate. MiniCircuit Lee29+ transistor and GaN based Qorvo TGA2597 MMIC are used in the design. The performance of the designed DA was evaluated by making small signal simulations. After simulations the circuit was realized and measured. The DA offers a small signal gain of 35 dB over the frequency band of 2-6 GHz.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] A 0.4–3.3 GHz low-noise variable gain amplifier with 35 dB tuning range, 4.9 dB NF, and 40 dBm IIP2
    Filipe D. Baumgratz
    Hao Li
    Filip Tavernier
    Sergio Bampi
    Carlos E. Saavedra
    Analog Integrated Circuits and Signal Processing, 2018, 94 : 9 - 17
  • [22] A 183 GHz Desensitized Unbalanced Cascode Amplifier With 9.5-dB Power Gain and 10-GHz Band Width and-2 dBm Saturation Power
    Khatibi, Hamid
    Khiyabani, Somayeh
    Afshari, Ehsan
    IEEE SOLID-STATE CIRCUITS LETTERS, 2018, 1 (03): : 58 - 61
  • [23] A wideband millimeter-wave power amplifier with 20 dB linear power gain and +8 dBm maximum saturated output power
    Jin, Yanyu
    Sanduleanu, Mihai A. T.
    Long, John R.
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2008, 43 (07) : 1553 - 1562
  • [24] A 205 GHz Amplifier With 10.5 dB Gain and-1.6 dBm Saturated Power Using 90 nm CMOS
    Moghadami, Siavash
    Ardalan, Shahab
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (03) : 207 - 209
  • [25] MONOLITHIC 2-6 GHZ LIMITING AMPLIFIER
    MAJIDIAHY, R
    OMORI, M
    STONEHAM, E
    ELECTRONICS LETTERS, 1987, 23 (17) : 910 - 912
  • [26] Design of a Compact 2-6 GHz High-Efficiency and High-Gain GaN Power Amplifier
    Zhou, Yongchun
    Wang, Shuai
    Dai, Junyan
    Luo, Jiang
    Cheng, Qiang
    MICROMACHINES, 2024, 15 (05)
  • [27] 35 dBm, 35 GHz Power Amplifier MMICs using 6-inch GaAs pHEMT Commercial Technology
    Mahon, S. J.
    Dadello, A.
    Fattorini, A. P.
    Bessemoulin, A.
    Harvey, J. T.
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 1117 - 1120
  • [28] A Compact 140-GHz CMOS Power Amplifier With 10.5-dBm Output Power and 27.6-dB Power Gain Supporting up to 128-QAM Modulation
    Chen, Liang
    Zhang, Lei
    Wu, Weiping
    Wang, Yan
    IEEE SOLID-STATE CIRCUITS LETTERS, 2022, 5 : 214 - 217
  • [29] A 0.4-3.3 GHz low-noise variable gain amplifier with 35 dB tuning range, 4.9 dB NF, and 40 dBm IIP2
    Baumgratz, Filipe D.
    Li, Hao
    Tavernier, Filip
    Bampi, Sergio
    Saavedra, Carlos E.
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2018, 94 (01) : 9 - 17
  • [30] A 24 GHz Signal Generator with 30.8 dBm Output Power Based on a Power Amplifier with 24.7 dBm Output Power and 31% PAE in SiGe
    Welp, Benedikt
    Noujeim, Karam
    Pohl, Nils
    2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2015, : 178 - 181
12345