A 2-6 GHz Driver Amplifier with 27 dBm Output Power and 35 dB Gain

被引：0
|
作者：
Cagdas, Engin [1 ]
Kizilbey, Oguzhan [2 ]
Yazgi, Metin [1 ]
机构：
[1] Istanbul Tech Univ, Elekt & Haberlesme Muhendisligi, Istanbul, Turkiye
[2] Tubitak Ulusal Metrol Enstitusu, Kocaeli, Turkiye
来源：
32ND IEEE SIGNAL PROCESSING AND COMMUNICATIONS APPLICATIONS CONFERENCE, SIU 2024 | 2024年
关键词：
GaN (HEMT); power amplifier; driver amplifier;
D O I：
10.1109/SIU61531.2024.10600910
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
In this paper, a wideband driver amplifier (DA) with flat gain is presented for driver stage in high power amplifier. The presented driver amplifier consists of 11 dB gain block, positive slope equalizer and power amplifier stage with 24 dB small signal gain. The designed DA has 500 mW (27 dBm) output power and operates along 2-6 GHz frequency band. This DA is designed to be implemented on the Rogers RT5870 dielectric substrate. MiniCircuit Lee29+ transistor and GaN based Qorvo TGA2597 MMIC are used in the design. The performance of the designed DA was evaluated by making small signal simulations. After simulations the circuit was realized and measured. The DA offers a small signal gain of 35 dB over the frequency band of 2-6 GHz.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] A 2-6 GHz High Efficiency Power Amplifier Design for Communication Systems
    Cagdas, Engin
    Kizilbey, Oguzhan
    Yazgi, Metin
    2023 31ST SIGNAL PROCESSING AND COMMUNICATIONS APPLICATIONS CONFERENCE, SIU, 2023,
  • [32] A 109 GHz CMOS Power Amplifier With 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology
    Son, Hyuk Su
    Jang, Joo Young
    Kang, Dong Min
    Lee, Hae Jin
    Park, Chul Soon
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2016, 26 (07) : 510 - 512
  • [33] 2-6 GHZ MONOLITHIC MICROWAVE-AMPLIFIER
    CAMP, WO
    TIWARI, S
    PARSONS, D
    MICROWAVE JOURNAL, 1983, 26 (05) : 51 - 51
  • [34] A 30-to-41 GHz SiGe Power Amplifier With Optimized Cascode Transistors Achieving 22.8 dBm Output Power and 27% PAE
    Wan, Chuanchuan
    Zhang, Hao
    Li, Ling
    Wang, Keping
    IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS, 2021, 68 (04) : 1158 - 1162
  • [35] An E-band SiGe Power Amplifier with 28 dB Gain and 19.2 dBm Output Power Utilizing an On-Chip Differential Power Combiner
    Furqan, Muhammad
    Ahmed, Faisal
    Jahn, Martin
    Stelzer, Andreas
    2015 10TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2015, : 21 - 24
  • [36] A 22.5-dB Gain, 20.1-dBm Output Power K-band Power Amplifier in 0.18-μm CMOS
    Hung, Chi-Cheng
    Kuo, Jing-Lin
    Lin, Kun-You
    Wang, Huei
    2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, : 557 - 560
  • [37] A 2.4 GHz CMOS power amplifier with 20 dBm output power for Bluetooth and WLAN applications
    Yen, CC
    Chuang, HR
    MICROWAVE JOURNAL, 2003, 46 (01) : 122 - +
  • [38] A broadband 23.1 ∼ 27.2 GHz doherty power amplifier with peak output power of 24.3 dBm
    Fang, Yanfeng
    Zhang, Yijiang
    CIRCUIT WORLD, 2020, 46 (01) : 1 - 5
  • [39] A 39 GHz Doherty-Like Power Amplifier With 22dBm Output Power and 21% Power-Added Efficiency at 6dB Power Back-Off
    Chen, Lang
    Chen, Lisheng
    Sun, Depeng
    Sun, Yichuang
    Pan, Yulin
    Zhu, Xi
    IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS, 2024, 14 (01) : 88 - 99
  • [40] A 2-6 GHz Power Amplifier with 45 % PAE in 0.25μm GaN Technology
    Mao, Shuman
    Liu, Xiansuo
    Guo, Yunchuan
    Wu, Yunqiu
    Xu, Yuehang
    PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 1298 - 1300
12345