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- [4] A 109-137 GHz Power Amplifier in SiGe BiCMOS with 16.5 dBm Output Power and 12.8% PAE 2017 12TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2017, : 281 - 284
- [5] A 109-137 GHz Power Amplifier in SiGe BiCMOS with 16.5 dBm Output Power and 12.8% PAE 2017 47TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2017, : 1021 - 1024
- [7] A 162 GHz Power Amplifier with 14 dBm Output Power 2016 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2016, : 174 - 177
- [8] A monolithic 24 GHz, 20 dBm, 14% PAE SiGe HBT power amplifier 2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4, 2006, : 241 - +
- [9] A 21 to 31 GHz Multi-Stage Stacked SOI Power Amplifier with 33% PAE and 18 dBm Output Power 2019 IEEE MTT-S INTERNATIONAL MICROWAVE CONFERENCE ON HARDWARE AND SYSTEMS FOR 5G AND BEYOND (IMC-5G), 2019,
- [10] A Q-Band SiGe Power Amplifier with 17.5 dBm Saturated Output Power and 26% Peak PAE 2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 146 - 149