Neutron Irradiation Induced Single-Event Burnout of IGBT

被引：0
|
作者：
Wang, Rong [1 ]
Jia, Yunpeng [1 ]
Zhou, Xintian [1 ]
机构：
[1] Beijing Univ Technol, Fac Informat Technol, Beijing, Peoples R China
来源：
2024 IEEE 2ND INTERNATIONAL CONFERENCE ON POWER SCIENCE AND TECHNOLOGY, ICPST 2024 | 2024年
关键词：
IGBT; neutron; SEB; burnout threshold; parasitic thyristor latch-up; FAILURES;
D O I：
10.1109/ICPST61417.2024.10601994
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper, accelerated irradiation test of 4.5kV IGBT (Insulated Gate Bipolar Transistor) was carried out by an atmospheric neutron irradiation instrument based on China Spallation Neutron Source (CSNS). The experiment confirmed atmospheric neutron irradiation caused single-event failure of the IGBTs. The IGBT failure occurred as the collector voltage increased to a critical value. The failure mechanism of 4.5kV IGBT under neutron irradiation was investigated by Sentaurus TCAD simulation. The simulation results indicate that with the increase of applied collector voltage, IGBT has a propensity to destruct, and the single-event burnout (SEB) occurs when a certain threshold is exceeded. The change of electric field distribution reveals that the root causes of SEB in IGBT are the avalanche multiplication effect and parasitic thyristor latch-up. In addition, the influence of different structural parameters on the burnout threshold is discussed, which provides ideas for the anti-radiation reinforcement of IGBT.
引用
收藏
页码：385 / 390
页数：6
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