Mitigation and Experiment on Neutron Induced Single-Event Upsets in SRAM-Based FPGAs

被引：4
|
作者：
Zhu, Mingda [1 ]
Song, Ningfang [1 ]
Pan, Xiong [1 ]
机构：
[1] Beijing Univ Aeronaut & Astronaut, Sch Instrument Sci & Optoelect Engn, Beijing 100191, Peoples R China
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 04期
基金：
中国国家自然科学基金;
关键词：
Neutron radiation; partial triple modular redundancy; probabilistic transfer matrix; single event upset; SRAM-based FPGA; RELIABILITY EVALUATION; SOFT ERRORS;
D O I：
10.1109/TNS.2013.2270562
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In order to study the Neutron induced single-event upsets (SEU) in SRAM-based FPGAs (SFPGAs), experiments have been conducted for validating its sensitivity. To increase the reliability of SFPGA designs in the presence of Neutron induced SEU, an analytical approach based on probabilistic transfer matrix (PTM) is introduced to estimate the relative reliability of designs mapped into SFPGAs. Moreover, the proposed method is able to obtain the error sensitivity rating of basic nodes in SFPGAs. Software is designed to implement the mitigation method. Results of neutron radiation experiment on a digital filter circuit design illustrate that impact induced by the neutron cannot be ignored, and partial triple modular redundancy (TMR) on the sensitive sub-circuits indicated by the proposed analysis method is effective for SEU mitigation with less area overhead than that of full TMR.
引用
收藏
页码：3063 / 3073
页数：11
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