Neutron single event upsets in SRAM-based FPGAs

被引：12
|
作者：
Ohlsson, M [1 ]
Dyreklev, P [1 ]
Johansson, K [1 ]
Alfke, P [1 ]
机构：
[1] Ericsson Saab Avion AB, Div Electromagnet Technol, S-58188 Linkoping, Sweden
来源：
1998 IEEE RADIATION EFFECTS DATA WORKSHOP | 1998年
关键词：
D O I：
10.1109/REDW.1998.731500
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
SRAM-based FPGAs have been studied for their sensitivity to atmospheric high energy neutrons. FPGAs with the supply voltage 5V and 3.3V were irradiated by 0-11, 14 and 100 MeV neutrons and showed a very low SEU susceptibility.
引用
收藏
页码：177 / 180
页数：4
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