ELECTRON BEAM EVAPORATION OF SILICON CARBIDE TO PRODUCE SILICON-CARBON COATINGS

被引：0

作者：

Burdovitsin, V. A. ^{[1
]}

Bakeev, I. Yu. ^{[1
]}

Ngon, L. J. ^{[1
]}

Kiki, A. ^{[1
]}

Oks, E. M. ^{[1
]}

Tyunkov, A. V. ^{[1
]}

机构：

[1] Tomsk State Univ Control Syst & Radioelect, 40 Lenin Ave, Tomsk 634050, Russia

来源：

HIGH TEMPERATURE MATERIAL PROCESSES | 2025年 / 29卷 / 01期

关键词：

plasma electron source; electron beam evaporation; silicon carbidecoatings; PLASMA;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we describe our work on the formation of silicon-carbon (Si-C) coatings by electron beam evaporation of a silicon carbide target in a medium vacuum using a forevacuum-pressure plas-ma-cathode electron source. The films obtained were characterized, which showed that the properties of the Si-C coatings were similar to those prepared by plasma-chemical methods.

引用

页数：8

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