ELECTRON BEAM EVAPORATION OF SILICON CARBIDE TO PRODUCE SILICON-CARBON COATINGS

被引：0
|
作者：
Burdovitsin, V. A. [1 ]
Bakeev, I. Yu. [1 ]
Ngon, L. J. [1 ]
Kiki, A. [1 ]
Oks, E. M. [1 ]
Tyunkov, A. V. [1 ]
机构：
[1] Tomsk State Univ Control Syst & Radioelect, 40 Lenin Ave, Tomsk 634050, Russia
来源：
HIGH TEMPERATURE MATERIAL PROCESSES | 2025年 / 29卷 / 01期
关键词：
plasma electron source; electron beam evaporation; silicon carbidecoatings; PLASMA;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we describe our work on the formation of silicon-carbon (Si-C) coatings by electron beam evaporation of a silicon carbide target in a medium vacuum using a forevacuum-pressure plas-ma-cathode electron source. The films obtained were characterized, which showed that the properties of the Si-C coatings were similar to those prepared by plasma-chemical methods.
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页数：8
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