An 80 MS/s 70.8 dB-SNDR Radiation-Tolerant Semi-Time-Interleaved Pipelined-SAR ADC for Space Applications

被引:0
|
作者
Li, Zheyi [1 ]
Berti, Laurent [2 ]
Zhao, Jinghao [1 ]
Lin, Qiuyang [2 ]
Gorbunov, Maxim [2 ]
Wang, Shiwei [3 ]
Thys, Geert [2 ]
Leroux, Paul [1 ]
机构
[1] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-2440 Geel, Belgium
[2] IMEC, B-3001 Leuven, Belgium
[3] Univ Edinburgh, Sch Engn, Edinburgh EH8 9YL, Scotland
关键词
MOSFET; Circuits; Transistors; Degradation; Single event upsets; Power dissipation; Space vehicles; Codes; Voltage; Total ionizing dose; Analog-to-digital converter (ADC); radiation-tolerant; successive-approximation register (SAR); single event effect (SEE); total ionizing dose (TID); time-interleaved; SINGLE; POWER; CMOS; AMPLIFIER; ENERGY;
D O I
10.1109/TCSI.2024.3516475
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In addition to the conventional ADC design tradeoffs between power, speed, and accuracy, radiation tolerance is the fourth factor for ADCs used in radiation environments. This paper describes radiation-tolerant (RT) ADC design tradeoffs and design strategies. Then, the paper introduces a 13-bit RT pipelined-successive-approximation register (pipelined-SAR) ADC fabricated in 65 nm CMOS technology based on the concluded tradeoffs. To further improve the ADC power efficiency, a semi-time-interleaved (Semi-TI) structure is employed. Besides, the ping-pong auto-zeroing (AZ) scheme is implemented in the residue amplifier (RA) to reduce the TID-induced offset while maintaining low power dissipation. The proposed ADC is designed and hardened against Single Event Effects (SEEs) and Total Ionizing Dose (TID) effects from the structure to layout levels. All sub-blocks were examined, and only the critical blocks were hardened to avoid over-hardening. From the measurement results, the prototype ADC attains an 80 MS/s sampling rate and achieves 70.8-dB SNDR and 80.3-dB SFDR at the Nyquist input frequency. With a total power consumption of 13.8 mW, the prototype ADC establishes a state-of-the-art Walden Figure of Merit of 60.7 fJ/conv step, yielding an efficiency comparable to non-RT ADCs with similar specifications. Irradiation tests validate the consistent performance of the ADC up to a cumulative dose of 500 krad (Si) in X-ray testing, while laser testing indicates a robust SEE threshold and swift post-SEE recovery.
引用
收藏
页数:14
相关论文
共 19 条
  • [1] An 80MS/s 70.79dB-SNDR 60.7fJ/conv-step Radiation-Tolerant Semi-Time-interleaved Pipelined-SAR ADC
    Li, Zheyi
    Berti, Laurent
    Lin, Qiuyang
    Zhao, Jinghao
    Gorbunov, Maxim
    Thys, Geert
    Leroux, Paul
    2024 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE, CICC, 2024,
  • [2] A 68.5 dB-SNDR, 12.4-fJ/conv.-step, 100-MS/s pipelined-SAR ADC with PVT-enhanced circuitry
    Han, Haolin
    Ren, Ruili
    Shen, Yi
    Ding, Ruixue
    Liu, Shubin
    Liang, Hongzhi
    MICROELECTRONICS JOURNAL, 2024, 153
  • [3] A 1.5 mW 68 dB SNDR 80 Ms/s 2x Interleaved Pipelined SAR ADC in 28 nm CMOS
    van der Goes, Frank
    Ward, Christopher M.
    Astgimath, Santosh
    Yan, Han
    Riley, Jeff
    Zeng, Zeng
    Mulder, Jan
    Wang, Sijia
    Bult, Klaas
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (12) : 2835 - 2845
  • [4] A 12-bit 200MS/s Pipelined-SAR ADC in 65-nm CMOS with 61.9 dB SNDR
    Liu, Haizhu
    Liu, Maliang
    Zhu, Zhangming
    2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019,
  • [5] An 11b 900 MS/s Time-Interleaved Sub-ranging Pipelined-SAR ADC
    Zhu, Yan
    Chan, Chi-Hang
    U, Seng-Pan
    Martins, R. P.
    PROCEEDINGS OF THE 40TH EUROPEAN SOLID-STATE CIRCUIT CONFERENCE (ESSCIRC 2014), 2014, : 211 - 214
  • [6] A Non-Interleaved 12-b 330-MS/s Pipelined-SAR ADC With PVT-Stabilized Dynamic Amplifier Achieving Sub-1-dB SNDR Variation
    Huang, Hai
    Xu, Hongda
    Elies, Brian
    Chiu, Yun
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (12) : 3235 - 3247
  • [7] A 9-bit, 110-MS/s Pipelined-SAR ADC Using Time-Interleaved Technique with Shared Comparator
    Kim, Taehoon
    Kim, Sunkwon
    Woo, Jong-Kwan
    Lee, Hyongmin
    Kim, Suhwan
    2015 28TH IEEE INTERNATIONAL SYSTEM-ON-CHIP CONFERENCE (SOCC), 2015, : 170 - 174
  • [8] A 2.08-mW 64.4-dB SNDR 400-MS/s Pipelined-SAR ADC Using Mismatch and PVT Variation Tolerant Dynamically Biased Ring Amplifier in 8 nm
    Lim, Yong
    Lee, Jaehoon
    Lee, Jongmi
    Lim, Kwangmin
    Oh, Seunghyun
    Lee, Jongwoo
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2024, : 4199 - 4210
  • [9] A 1.5mW 68dB SNDR 80MS/s 2x Interleaved SAR-Assisted Pipelined ADC in 28nm CMOS
    van der Goes, Frank
    Ward, Chris
    Astgimath, Santosh
    Yan, Han
    Riley, Jeff
    Mulder, Jan
    Wang, Sijia
    Bult, Klaas
    2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 200 - +
  • [10] A 69-dB SNDR 300-MS/s Two-Time Interleaved Pipelined SAR ADC in 16-nm CMOS FinFET With Capacitive Reference Stabilization
    Martens, Ewout
    Hershberg, Benjamin
    Craninckx, Jan
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53 (04) : 1161 - 1171