Lanthanide doped semiconductor thin films for photonic and optoelectronic applications

被引:0
|
作者
Wang, Jiawen [1 ]
Huang, Lihui [1 ]
Lin, Shenghuang [2 ]
Xu, Shiqing [1 ]
Bai, Gongxun [1 ]
机构
[1] China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
[2] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
来源
APPLIED PHYSICS REVIEWS | 2025年 / 12卷 / 01期
基金
中国国家自然科学基金;
关键词
LIGHT-EMITTING DEVICES; ION; METAL; EU3+; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; PHOSPHOR;
D O I
10.1063/5.0220910
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-performing semiconductor thin films are crucial components in today's electronic age, finding extensive applications in devices and chips. Recently, there has been a significant trend toward incorporating lanthanide elements into these films, primarily driven by the escalating demand for photonic and optoelectronic applications. The featured article presents a detailed overview of the latest research advancements in lanthanide-doped semiconductor thin films tailored for photonic and optoelectronic uses. This comprehensive review encompasses the principles, design considerations, fabrication methods, and characterization techniques involved in creating these doped films. The semiconductors discuss span a range of materials, including wide bandgap semiconductors, perovskites, two-dimensional materials, piezoelectric materials, and organic materials. The article further explores the photonic and optoelectronic applications of these doped films. Finally, it delves into the current challenges, potential solutions, future prospects, and research gaps that need to be addressed in this exciting field.
引用
收藏
页数:21
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