Lanthanide doped semiconductor thin films for photonic and optoelectronic applications

被引:0
|
作者
Wang, Jiawen [1 ]
Huang, Lihui [1 ]
Lin, Shenghuang [2 ]
Xu, Shiqing [1 ]
Bai, Gongxun [1 ]
机构
[1] China Jiliang Univ, Coll Opt & Elect Technol, Hangzhou 310018, Zhejiang, Peoples R China
[2] Songshan Lake Mat Lab, Dongguan 523808, Guangdong, Peoples R China
来源
APPLIED PHYSICS REVIEWS | 2025年 / 12卷 / 01期
基金
中国国家自然科学基金;
关键词
LIGHT-EMITTING DEVICES; ION; METAL; EU3+; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; PHOSPHOR;
D O I
10.1063/5.0220910
中图分类号
O59 [应用物理学];
学科分类号
摘要
High-performing semiconductor thin films are crucial components in today's electronic age, finding extensive applications in devices and chips. Recently, there has been a significant trend toward incorporating lanthanide elements into these films, primarily driven by the escalating demand for photonic and optoelectronic applications. The featured article presents a detailed overview of the latest research advancements in lanthanide-doped semiconductor thin films tailored for photonic and optoelectronic uses. This comprehensive review encompasses the principles, design considerations, fabrication methods, and characterization techniques involved in creating these doped films. The semiconductors discuss span a range of materials, including wide bandgap semiconductors, perovskites, two-dimensional materials, piezoelectric materials, and organic materials. The article further explores the photonic and optoelectronic applications of these doped films. Finally, it delves into the current challenges, potential solutions, future prospects, and research gaps that need to be addressed in this exciting field.
引用
收藏
页数:21
相关论文
共 50 条
  • [31] Optoelectronic characterization of Si and Be doped GaAs thin films
    Liu, Sining
    Zheng, Haifeng
    Zhang, Qiang
    Fang, Dan
    Gu, Kaihui
    FERROELECTRICS, 2024, 618 (13-14) : 2173 - 2180
  • [32] Optoelectronic properties of In-doped SnS thin films
    Kafashan, Hosein
    CERAMICS INTERNATIONAL, 2019, 45 (01) : 334 - 345
  • [33] Optoelectronic properties of doped hydrothermal ZnO thin films
    Mughal, Asad J.
    Carberry, Benjamin
    Oh, Sang Ho
    Myzaferi, Anisa
    Speck, James S.
    Nakamura, Shuji
    DenBaars, Steven P.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2017, 214 (06):
  • [34] Applications of two-dimensional photonic crystals to semiconductor optoelectronic devices
    Benisty, H
    Olivier, S
    Rattier, M
    Weisbuch, C
    PHOTONIC CRYSTALS AND LIGHT LOCALIZATION IN THE 21ST CENTURY, 2001, 563 : 117 - 128
  • [35] Molecular doped organic semiconductor crystals for optoelectronic device applications
    Qin, Zhengsheng
    Gao, Can
    Wong, Wallace W. H.
    Riede, Moritz K.
    Wang, Tianyu
    Dong, Huanli
    Zhen, Yonggang
    Hu, Wenping
    JOURNAL OF MATERIALS CHEMISTRY C, 2020, 8 (43) : 14996 - 15008
  • [36] Inexpensive fabrication of radiation shielding and hydrophobic hafnium dioxide thin films for electronic, photonic and optoelectronic applications
    Yepuri, Venkatesh
    Rao, Boyina Subrahmanyeswara
    JOURNAL OF OPTICS-INDIA, 2024,
  • [37] Ultra-thin gold films: towards 2D metals for photonic and optoelectronic applications
    Volkov, V. S.
    Yakubovsky, D. I.
    Stebunov, Y. V.
    Kirtaev, R. V.
    Ermolaev, G. A.
    Mironov, M. S.
    Novikov, S. M.
    Voronin, K. V.
    Arsenin, A. V.
    METANANO 2019, 2020, 1461
  • [38] Physical properties of La-doped NiO sprayed thin films for optoelectronic and sensor applications
    Mrabet, C.
    Ben Amor, M.
    Boukhachem, A.
    Amlouk, M.
    Manoubi, T.
    CERAMICS INTERNATIONAL, 2016, 42 (05) : 5963 - 5978
  • [39] Optical characterization of Ag-doped Ge–Se semiconducting thin films for optoelectronic applications
    A. Z. Mahmoud
    Mansour Mohamed
    Applied Physics A, 2019, 125
  • [40] Terbium-doped SnS thin films: comprehensive physical and optoelectronic characterizations for the photodetector applications
    Prasad, K. Hari
    Vinoth, S.
    Juliet, A. Vimala
    Ganesh, V.
    Yahia, I. S.
    AlAbdulaal, T. H.
    IONICS, 2024, 30 (08) : 5079 - 5091