Ovonic Threshold Switching for Ultralow Energy Physical Reservoir Computing

被引:0
|
作者
Guo, Y. Y. [1 ,2 ]
Degraeve, R. [1 ]
Ravsher, T. [1 ,2 ]
Garbin, D. [1 ]
Roussel, P. [1 ]
Kar, G. S. [1 ]
Bury, E. [1 ]
Linten, D. [1 ]
Verbauwhede, I. [2 ]
机构
[1] IMEC, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Leuven, Belgium
关键词
Authentication; Leakage currents; Switches; Threshold voltage; Vectors; Hardware; Current measurement; Training; Reservoir computing; Pulse measurements; Gait authentication; hardware security; one-shot learning; ovonic threshold switch (OTS); phase space reconstruction (PSR); reservoir computing (RC);
D O I
10.1109/TED.2025.3533390
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this article, we demonstrate physical reservoir computing (RC) in ovonic threshold switching (OTS) devices. We show that SiGeAsSe OTS is suitable as a physical reservoir because of the nonlinear change in the number of delocalized defects. With the combination of phase space reconstruction (PSR), our algorithm can project data into high-dimensional spaces, thereby enhancing the distinguishability of the data. Such ability is suitable for high-accuracy authentication and classification. Our algorithm can be implemented using both crossbar arrays or individual devices, and achieves a significantly low (0.08%) equal error rate (EER) on gait authentication in simulation. Furthermore, we validated our concept by successfully implementing the algorithm on nine hardware OTS devices and achieved an EER of 4.2% on gait authentication. The low leakage current level of OTS, the fast learning of RC, and interval-based readout responses all contribute to a significantly reduced energy consumption of our proposed method.
引用
收藏
页码:1112 / 1117
页数:6
相关论文
共 50 条
  • [21] Cycling Induced Metastable Degradation in GeSe Ovonic Threshold Switching Selector
    Chai, Zheng
    Zhang, Weidong
    Clima, Sergiu
    Hatem, Firas
    Degraeve, Robin
    Diao, Qihui
    Zhang, Jian Fu
    Freitas, Pedro
    Marsland, John
    Fantini, Andrea
    Garbin, Daniele
    Goux, Ludovic
    Kar, Gouri Sankar
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (10) : 1448 - 1451
  • [22] Novel applications of ZnTe as an ovonic threshold switching and as a phase change material
    O. Maksimov
    K. Hansen
    H. B. Bhandari
    G. Wicker
    H. Mousa
    S. Ilhom
    H. Silva
    MRS Advances, 2023, 8 : 173 - 176
  • [23] In silico screening for As/Se-free ovonic threshold switching materials
    Clima, Sergiu
    Matsubayashi, Daisuke
    Ravsher, Taras
    Garbin, Daniele
    Delhougne, Romain
    Kar, Gouri Sankar
    Pourtois, Geoffrey
    NPJ COMPUTATIONAL MATERIALS, 2023, 9 (01)
  • [24] Field-induced nucleation switching in binary ovonic threshold switches
    Lee, Sangmin
    Yoo, Jongmyung
    Park, Jaehyuk
    Hwang, Hyunsang
    APPLIED PHYSICS LETTERS, 2019, 115 (23)
  • [25] In silico screening for As/Se-free ovonic threshold switching materials
    Sergiu Clima
    Daisuke Matsubayashi
    Taras Ravsher
    Daniele Garbin
    Romain Delhougne
    Gouri Sankar Kar
    Geoffrey Pourtois
    npj Computational Materials, 9
  • [26] Low threshold ovonic switching in a-Si:H/InSb heterostructures
    Venkataraghavan, R
    Rao, KSRK
    Bhat, HL
    Pal, S
    Dubey, GC
    SOLID STATE COMMUNICATIONS, 1997, 102 (10) : 759 - 762
  • [27] Novel applications of ZnTe as an ovonic threshold switching and as a phase change material
    Maksimov, O.
    Hansen, K.
    Bhandari, H. B.
    Wicker, G.
    Mousa, H.
    Ilhom, S.
    Silva, H.
    MRS ADVANCES, 2023, 8 (05) : 173 - 176
  • [28] Structural features of chalcogenide glass SiTe: An ovonic threshold switching material
    Gu, Rongchuan
    Xu, Meng
    Yu, Run
    Qiao, Chong
    Wang, Cai-Zhuang
    Ho, Kai-Ming
    Wang, Songyou
    Miao, Xiangshui
    Xu, Ming
    APL MATERIALS, 2021, 9 (08):
  • [29] A physical model of ovonic threshold switching effect for phase change memory based on the trap-to-band transition mechanism
    Shen, Dongyun
    Wei, Yiqun
    Deng, Bin
    Gong, Yuefeng
    Liu, Yan
    Lin, Xinnan
    Cui, Xiaole
    Song, ZhiTang
    2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2014,
  • [30] Artificial Neurons Based on a Threshold Switching Memristor with Ultralow Threshold Voltage
    Liang, Huaxian
    Jiang, Ting
    Wang, Yu
    An, Le
    Bian, Lanxin
    Zhou, Jiacheng
    Zhang, Baolin
    ACS APPLIED ELECTRONIC MATERIALS, 2025, 7 (07) : 3019 - 3029