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- [31] An ovonic threshold switching selector based on Se-rich GeSe chalcogenideApplied Physics A, 2019, 125Bing Song论文数: 0 引用数: 0 h-index: 0机构: National University of Defense Technology,College of Electronic Science and TechnologyHui Xu论文数: 0 引用数: 0 h-index: 0机构: National University of Defense Technology,College of Electronic Science and TechnologySen Liu论文数: 0 引用数: 0 h-index: 0机构: National University of Defense Technology,College of Electronic Science and TechnologyHaijun Liu论文数: 0 引用数: 0 h-index: 0机构: National University of Defense Technology,College of Electronic Science and TechnologyQi Liu论文数: 0 引用数: 0 h-index: 0机构: National University of Defense Technology,College of Electronic Science and TechnologyQingjiang Li论文数: 0 引用数: 0 h-index: 0机构: National University of Defense Technology,College of Electronic Science and Technology
- [32] An ovonic threshold switching selector based on Se-rich GeSe chalcogenideAPPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2019, 125 (11):Song, Bing论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R ChinaXu, Hui论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R ChinaLiu, Sen论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R ChinaLiu, Haijun论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R ChinaLiu, Qi论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Inst Microelect, Key Lab Microelect Device & Integrated Technol, Beijing 100029, Peoples R China Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R ChinaLi, Qingjiang论文数: 0 引用数: 0 h-index: 0机构: Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R China Natl Univ Def Technol, Coll Elect Sci & Technol, Changsha 410073, Hunan, Peoples R China
- [33] Polarity-Induced Threshold Voltage Shift in Ovonic Threshold Switching Chalcogenides and the Impact of Material CompositionPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2023, 17 (08):Ravsher, Taras论文数: 0 引用数: 0 h-index: 0机构: Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, Belgium Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumGarbin, Daniele论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumFantini, Andrea论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumDegraeve, Robin论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumClima, Sergiu论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumDonadio, Gabriele Luca论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumKundu, Shreya论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumHody, Hubert论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumDevulder, Wouter论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumVan Houdt, Jan论文数: 0 引用数: 0 h-index: 0机构: Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, Belgium Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumAfanas'ev, Valeri论文数: 0 引用数: 0 h-index: 0机构: Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumDelhougne, Romain论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, BelgiumKar, Gouri Sankar论文数: 0 引用数: 0 h-index: 0机构: Imec, Semicond Technol & Syst, Kapeldreef 75, B-3001 Leuven, Belgium Katholieke Univ Leuven, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuven, Belgium
- [34] Characteristic of As3Se4-based ovonic threshold switching deviceJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2021, 32 (06) : 7209 - 7214Yuan, Zhenhui论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaLi, Xiaodan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaWang, Hao论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaXue, Yuan论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSong, Sannian论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSong, Zhitang论文数: 0 引用数: 0 h-index: 0机构: Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaZhu, Shuaishuai论文数: 0 引用数: 0 h-index: 0机构: Suzhou Co Ltd, ULVAC Res Ctr, Suzhou 215026, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaHan, Gang论文数: 0 引用数: 0 h-index: 0机构: Suzhou Co Ltd, ULVAC Res Ctr, Suzhou 215026, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaYang, Bingjun论文数: 0 引用数: 0 h-index: 0机构: Suzhou Co Ltd, ULVAC Res Ctr, Suzhou 215026, Peoples R China Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaJimbo, Takehito论文数: 0 引用数: 0 h-index: 0机构: ULVAC Inc, Chigasaki, Kanagawa 2538543, Japan Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R ChinaSuu, Koukou论文数: 0 引用数: 0 h-index: 0机构: Suzhou Co Ltd, ULVAC Res Ctr, Suzhou 215026, Peoples R China ULVAC Inc, Chigasaki, Kanagawa 2538543, Japan Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
- [35] Improved Memory Performance Through Integration of Ferroelectric and Ovonic Threshold Switching LayerIEEE ELECTRON DEVICE LETTERS, 2025, 46 (01) : 44 - 47论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:Oh, Seungyeol论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South KoreaSeo, Yoori论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South KoreaKwon, Ohhyuk论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South KoreaHwang, Hyunsang论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Ctr Single Atom Based Semicond Device, Dept Mat Sci & Engn, Pohang 790784, South Korea
- [36] Characteristic of As3Se4-based ovonic threshold switching deviceJournal of Materials Science: Materials in Electronics, 2021, 32 : 7209 - 7214Zhenhui Yuan论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyXiaodan Li论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyHao Wang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyYuan Xue论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologySannian Song论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyZhitang Song论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyShuaishuai Zhu论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyGang Han论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyBingjun Yang论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyTakehito Jimbo论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information TechnologyKoukou Suu论文数: 0 引用数: 0 h-index: 0机构: Chinese Academy of Sciences,State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology
- [37] Enhanced Switching Characteristics of an Ovonic Threshold Switching Device With an Ultra-Thin MgO Interfacial LayerIEEE ELECTRON DEVICE LETTERS, 2022, 43 (02) : 220 - 223论文数: 引用数: h-index:机构:Lee, Sangmin论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South KoreaKwak, Myonghoon论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea论文数: 引用数: h-index:机构:Mosendz, Oleksandr论文数: 0 引用数: 0 h-index: 0机构: Western Digital Corp, Western Digital Res Ctr, San Jose, CA 95119 USA Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South KoreaHwang, Hyunsang论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Ctr Single Atom Based Semicond Device, Pohang 790784, South Korea
- [38] Dependence of Switching Probability on Operation Conditions in GexSe1-x Ovonic Threshold Switching SelectorsIEEE ELECTRON DEVICE LETTERS, 2019, 40 (08) : 1269 - 1272Chai, Zheng论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandZhang, Weidong论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandDegraeve, Robin论文数: 0 引用数: 0 h-index: 0机构: IMEC, Memory Dept, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandClima, Sergiu论文数: 0 引用数: 0 h-index: 0机构: IMEC, Memory Dept, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England论文数: 引用数: h-index:机构:Zhang, Jian Fu论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England论文数: 引用数: h-index:机构:Marsland, John论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandFantini, Andrea论文数: 0 引用数: 0 h-index: 0机构: IMEC, Memory Dept, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandGarbin, Daniele论文数: 0 引用数: 0 h-index: 0机构: IMEC, Memory Dept, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandGoux, Ludovic论文数: 0 引用数: 0 h-index: 0机构: IMEC, Memory Dept, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandKar, Gouri Sankar论文数: 0 引用数: 0 h-index: 0机构: IMEC, Memory Dept, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England
- [39] GeSe-Based Ovonic Threshold Switching Volatile True Random Number GeneratorIEEE ELECTRON DEVICE LETTERS, 2020, 41 (02) : 228 - 231Chai, Zheng论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandShao, Wei论文数: 0 引用数: 0 h-index: 0机构: RMIT Univ, Sch Sci Comp Sci, Melbourne, Vic 3001, Australia Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandZhang, Weidong论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England论文数: 引用数: h-index:机构:Degraeve, Robin论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandSalim, Flora D.论文数: 0 引用数: 0 h-index: 0机构: RMIT Univ, Sch Sci Comp Sci, Melbourne, Vic 3001, Australia Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandClima, Sergiu论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England论文数: 引用数: h-index:机构:Zhang, Jian Fu论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England论文数: 引用数: h-index:机构:Marsland, John论文数: 0 引用数: 0 h-index: 0机构: Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandFantini, Andrea论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandGarbin, Daniele论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandGoux, Ludovic论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, EnglandKar, Gouri Sankar论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Leuven, Belgium Liverpool John Moores Univ, Dept Elect & Elect Engn, Liverpool L3 3AF, Merseyside, England
- [40] Indium turns tellurium into an ovonic threshold switching selector via a stabilizing amorphous networkJOURNAL OF MATERIALS CHEMISTRY C, 2024, 12 (27) : 10118 - 10126Wang, Huan论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaGu, Rongchuan论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaMai, Xianliang论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaHu, Hengyi论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaXu, Meng论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaTong, Hao论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Hubei Yangtze Memory Labs, Wuhan 430205, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaWang, Zhongrui论文数: 0 引用数: 0 h-index: 0机构: Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaMiao, Xiangshui论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Hubei Yangtze Memory Labs, Wuhan 430205, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R ChinaXu, Ming论文数: 0 引用数: 0 h-index: 0机构: Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China Hubei Yangtze Memory Labs, Wuhan 430205, Peoples R China Huazhong Univ Sci & Technol, Sch Integrated Circuits, Wuhan Natl Lab Optoelect, Wuhan 430074, Peoples R China