A physical model of ovonic threshold switching effect for phase change memory based on the trap-to-band transition mechanism

被引：0
|
作者：
Shen, Dongyun [1 ]
Wei, Yiqun [1 ]
Deng, Bin [1 ]
Gong, Yuefeng [2 ]
Liu, Yan [2 ]
Lin, Xinnan [1 ]
Cui, Xiaole [1 ]
Song, ZhiTang [2 ]
机构：
[1] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen, Peoples R China
[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年
关键词：
phase-change memory; physical model; ovonic threshold switch;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new physical conductivity model of amorphous chalcogenide is proposed, based on carriers transport theory including hopping transport and trap-to-band transition. A numerical simulator based on this model is developed, and the simulation results agree well with the measurement. The ovonic switch voltage and current with different active area and temperature are studied based on the simulator, and the results show a good consistence with the measurement.
引用
收藏
页数：2
相关论文
共 26 条
  • [1] Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase change memory
    Chen, Chong
    Wei, Yiqun
    Zhao, Jianwei
    Lin, Xinnan
    Song, Zhitang
    2015 15TH NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2015,
  • [2] Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device
    Lee, Sangmin
    Lee, Jangseop
    Kwak, Myonghoon
    Mosendz, Oleksandr
    Hwang, Hyunsang
    APPLIED PHYSICS LETTERS, 2021, 118 (21)
  • [3] A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect
    Wang, Ling
    Lin, Xinnan
    Wang, Wei
    Wu, Jiazhen
    Wei, Yiqun
    Wang, Laidong
    He, Jin
    Wang, Ruonan
    Wang, Wenping
    Wu, Wen
    Ma, Yong
    Gu, Xin
    NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2, 2011, : 615 - 618
  • [4] Ovonic threshold switching selectors for three-dimensional stackable phase-change memory
    Min Zhu
    Kun Ren
    Zhitang Song
    MRS Bulletin, 2019, 44 : 715 - 720
  • [5] Ovonic threshold switching selectors for three-dimensional stackable phase-change memory
    Zhu, Min
    Ren, Kun
    Song, Zhitang
    MRS BULLETIN, 2019, 44 (09) : 715 - 720
  • [6] Mechanism of threshold switching in chalcogenide phase change memory devices
    Karpov, I.
    Savransky, S.
    Karpov, V.
    2007 22ND IEEE NON-VOLATILE SEMICONDUCTOR MEMORY WORKSHOP, 2007, : 56 - +
  • [7] Threshold switching and phase transition numerical models for phase change memory simulations
    Redaelli, A.
    Pirovano, A.
    Benvenuti, A.
    Lacaita, A. L.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (11)
  • [8] Field dependent conductivity and threshold switching in amorphous chalcogenides-Modeling and simulations of ovonic threshold switches and phase change memory devices
    Scoggin, Jake
    Silva, Helena
    Gokirmak, Ali
    JOURNAL OF APPLIED PHYSICS, 2020, 128 (23)
  • [9] Understanding Switching Mechanism of Selector-Only Memory Using Se-Based Ovonic Threshold Switch Device
    Lee, Jangseop
    Seo, Yoori
    Ban, Sanghyun
    Kim, Dong Gwan
    Park, Yu Bin
    Lee, Tae Hoon
    Hwang, Hyunsang
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (05) : 3351 - 3357
  • [10] A Field-induced Threshold Switching Model of Phase-change Memory
    Wei, Yiqun
    Lin, Xinnan
    7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
123