A physical model of ovonic threshold switching effect for phase change memory based on the trap-to-band transition mechanism

被引：0

作者：

Shen, Dongyun ^{[1
]}

Wei, Yiqun ^{[1
]}

Deng, Bin ^{[1
]}

Gong, Yuefeng ^{[2
]}

Liu, Yan ^{[2
]}

Lin, Xinnan ^{[1
]}

Cui, Xiaole ^{[1
]}

Song, ZhiTang ^{[2
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Key Lab Integrated Microsyst, Shenzhen, Peoples R China

[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China

来源：

2014 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2014年

关键词：

phase-change memory; physical model; ovonic threshold switch;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new physical conductivity model of amorphous chalcogenide is proposed, based on carriers transport theory including hopping transport and trap-to-band transition. A numerical simulator based on this model is developed, and the simulation results agree well with the measurement. The ovonic switch voltage and current with different active area and temperature are studied based on the simulator, and the results show a good consistence with the measurement.

引用

页数：2

共 26 条

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