Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors

被引：0

作者：

Viscardi, Loredana ^{[1
,2
]}

Faella, Enver ^{[1
,2
]}

Intonti, Kimberly ^{[1
,2
]}

Giubileo, Filippo ^{[2
]}

Demontis, Valeria ^{[3
,4
]}

Prete, Domenic ^{[3
,5
]}

Zannier, Valentina ^{[3
]}

Sorba, Lucia ^{[3
]}

Rossella, Francesco ^{[6
]}

Di Bartolomeo, Antonio ^{[1
,2
]}

机构：

[1] Department of Physics E.R. Caianiello, University of Salerno, Via Giovanni Paolo II 132, Fisciano, Salerno,84084, Italy

[2] CNR-SPIN, Via Giovanni Paolo II 132, Fisciano, Salerno,84084, Italy

[3] NEST, Scuola Normale Superiore and Institute of Nanoscience – CNR, Piazza San Silvestro 12, Pisa,56127, Italy

[4] Department of Physics, University of Cagliari, S.P. Monserrato-Sestu Km 0.7, Monserrato,09042, Italy

[5] INFN Section of Pavia, Via Agostino Bassi 6, Pavia,27100, Italy

[6] Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Via Campi 213/A, Modena,41125, Italy

来源：

Materials Science in Semiconductor Processing | 2024年 / 173卷

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Indium arsenide

引用

共 50 条

[21] Performance of n-Type InSb and InAs Nanowire Field-Effect Transistors
Khayer, M. Abul
Lake, Roger K.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 2939 - 2945
[22] Strain-Dependent Characteristics of Triangular Silicon Nanowire-Based Field-Effect Transistors on Flexible Plastics
Koo, Jamin
Jeon, Youngin
Lee, Myeongwon
Kim, Sangsig
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (06)
[23] Nanowire-based field effect transistors for terahertz detection and imaging systems
Romeo, L.
Coquillat, D.
Pea, M.
Ercolani, D.
Beltram, F.
Sorba, L.
Knap, W.
Tredicucci, A.
Vitiello, M. S.
NANOTECHNOLOGY, 2013, 24 (21)
[24] SiC Nanowire Field-Effect Transistors Based on Dielectrophoresis
Dai, Zhenqing
Zhang, Liying
Chen, Haiyan
Wei, Liangming
Xu, Dong
Zhang, Yafei
2010 INTERNATIONAL CONFERENCE ON INFORMATION, ELECTRONIC AND COMPUTER SCIENCE, VOLS 1-3, 2010, : 1710 - 1712
[25] Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector
Shaygan, Mehrdad
Davami, Keivan
Kheirabi, Nazli
Baek, Changi Ki
Cuniberti, Gianaurelio
Meyyappand, M.
Lee, Jeong-Soo
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2014, 16 (41) : 22687 - 22693
[26] Nanowire Tunneling Field-Effect Transistors
Knoch, Joachim
SEMICONDUCTORS AND SEMIMETALS, VOL 94: SEMICONDUCTOR NANOWIRES II: PROPERTIES AND APPLICATIONS, 2016, 94 : 273 - 295
[27] ZnO Nanowire Field-Effect Transistors
Chang, Pai-Chun
Lu, Jia Grace
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (11) : 2977 - 2987
[28] Field-effect transistors based on two-dimensional materials for logic applications
Wang Xin-Ran
Shi Yi
Zhang Rong
CHINESE PHYSICS B, 2013, 22 (09)
[29] Characterizing Leakage Current in Silicon Nanowire-Based Field-Effect Transistors by Applying Pseudo-Random Sequences
Roinila, Tomi
Yu, Xiao
Gao, Anran
Li, Tie
Verho, Jarmo
Vilkko, Matti
Kallio, Pasi
Wang, Yuelin
Lekkala, Jukka
2012 INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO), 2012, : 160 - 164
[30] Field-effect transistors based on two-dimensional materials for logic applications
王欣然
施毅
张荣
Chinese Physics B, 2013, (09) : 151 - 165

← 1 2 3 4 5 →