Temperature behavior and logic circuit applications of InAs nanowire-based field-effect transistors

被引：0
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作者：
Viscardi, Loredana [1 ,2 ]
Faella, Enver [1 ,2 ]
Intonti, Kimberly [1 ,2 ]
Giubileo, Filippo [2 ]
Demontis, Valeria [3 ,4 ]
Prete, Domenic [3 ,5 ]
Zannier, Valentina [3 ]
Sorba, Lucia [3 ]
Rossella, Francesco [6 ]
Di Bartolomeo, Antonio [1 ,2 ]
机构：
[1] Department of Physics E.R. Caianiello, University of Salerno, Via Giovanni Paolo II 132, Fisciano, Salerno,84084, Italy
[2] CNR-SPIN, Via Giovanni Paolo II 132, Fisciano, Salerno,84084, Italy
[3] NEST, Scuola Normale Superiore and Institute of Nanoscience – CNR, Piazza San Silvestro 12, Pisa,56127, Italy
[4] Department of Physics, University of Cagliari, S.P. Monserrato-Sestu Km 0.7, Monserrato,09042, Italy
[5] INFN Section of Pavia, Via Agostino Bassi 6, Pavia,27100, Italy
[6] Department of Physics, Informatics and Mathematics, University of Modena and Reggio Emilia, Via Campi 213/A, Modena,41125, Italy
来源：
Materials Science in Semiconductor Processing | 2024年 / 173卷
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摘要：
Indium arsenide
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