InGaN-based blue and red micro-LEDs: Impact of carrier localization

被引：0
|
作者：
Park, Jeong-Hwan [1 ]
Pristovsek, Markus [2 ]
Han, Dong-Pyo [3 ]
Kim, Bumjoon [4 ]
Lee, Soo Min [4 ]
Hanser, Drew [4 ]
Parikh, Pritesh [5 ]
Cai, Wentao [2 ]
Shim, Jong-In [6 ]
Lee, Dong-Seon [7 ]
Seong, Tae-Yeon [2 ,8 ]
Amano, Hiroshi [1 ,2 ]
机构：
[1] Deep Tech Serial Innovation Center, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya,464-8603, Japan
[2] Institute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya,464-8601, Japan
[3] Major of Display and Semiconductor Engineering, Division of Electrical Engineering, Pukyong National University, Busan,48513, Korea, Republic of
[4] Veeco Instruments Inc., Somerset,NJ,08873, United States
[5] Eurofins Nanolab Technologies, 1708 McCarthy Blvd, Milpitas,CA,95035, United States
[6] Department of Photonics and Nanoelectornics, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Gyeonggi-do, Ansan,15588, Korea, Republic of
[7] School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju,61005, Korea, Republic of
[8] Department of Materials Science and Engineering, Korea University, Seoul,02841, Korea, Republic of
来源：
Applied Physics Reviews | 2024年 / 11卷 / 04期
关键词：
D O I：
10.1063/5.0195261
中图分类号：
学科分类号：
摘要：
66
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