Quantitative Analysis and Characterization of Sidewall Defects in InGaN-Based Blue Micro-LEDs

被引：0
|
作者：
Park, Jeonghyeon [1 ]
Cho, Won Seok [1 ]
Jang, Hojung [1 ]
Kim, Jawon [1 ]
Yoo, Chuljong [2 ]
Kim, Buem Joon [2 ]
Jeong, Junseok [2 ]
Lee, Jong Won [2 ]
Hwang, Hyunsang [1 ]
Kim, Jong Kyu [1 ]
机构：
[1] Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Gyeongsangbuk-do, Pohang,37673, Korea, Republic of
[2] Samsung Display Co. Ltd., Gyeonggi-do, Yongin,17113, Korea, Republic of
来源：
ACS Applied Electronic Materials | 2024年 / 6卷 / 11期
关键词：
D O I：
10.1021/acsaelm.4c01598
中图分类号：
学科分类号：
摘要：
40
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页码：8377 / 8383
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