InGaN-based blue and red micro-LEDs: Impact of carrier localization

被引：0
|
作者：
Park, Jeong-Hwan [1 ]
Pristovsek, Markus [2 ]
Han, Dong-Pyo [3 ]
Kim, Bumjoon [4 ]
Lee, Soo Min [4 ]
Hanser, Drew [4 ]
Parikh, Pritesh [5 ]
Cai, Wentao [2 ]
Shim, Jong-In [6 ]
Lee, Dong-Seon [7 ]
Seong, Tae-Yeon [2 ,8 ]
Amano, Hiroshi [1 ,2 ]
机构：
[1] Deep Tech Serial Innovation Center, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya,464-8603, Japan
[2] Institute of Materials and Systems for Sustainability, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya,464-8601, Japan
[3] Major of Display and Semiconductor Engineering, Division of Electrical Engineering, Pukyong National University, Busan,48513, Korea, Republic of
[4] Veeco Instruments Inc., Somerset,NJ,08873, United States
[5] Eurofins Nanolab Technologies, 1708 McCarthy Blvd, Milpitas,CA,95035, United States
[6] Department of Photonics and Nanoelectornics, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Gyeonggi-do, Ansan,15588, Korea, Republic of
[7] School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology, Gwangju,61005, Korea, Republic of
[8] Department of Materials Science and Engineering, Korea University, Seoul,02841, Korea, Republic of
来源：
Applied Physics Reviews | 2024年 / 11卷 / 04期
关键词：
D O I：
10.1063/5.0195261
中图分类号：
学科分类号：
摘要：
66
引用
收藏
相关论文
共 50 条
  • [41] Transmission data rate improvement by InGaN barriers in GaN-based blue micro-LEDs for visible light communication
    Huang, Zhen
    Tao, Renchun
    Li, Duo
    Rao, Zhiwei
    Yuan, Zexing
    Li, Tai
    Chen, Zhaoying
    Yuan, Ye
    Kang, Junjie
    Liang, Zhiwen
    Wang, Qi
    Tian, Pengfei
    Shen, Bo
    Wang, Xinqiang
    OPTICS LETTERS, 2022, 47 (16) : 4235 - 4238
  • [42] Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress
    Islam, Abu Bashar Mohammad Hamidul
    Kim, Tae Kyoung
    Shin, Dong-Soo
    Shim, Jong-In
    Kwak, Joon Seop
    APPLIED PHYSICS LETTERS, 2022, 121 (01)
  • [43] Electroluminescence mapping of InGaN-based LEDs by SNOM
    Marutsuki, G
    Narukawa, Y
    Mitani, T
    Mukai, T
    Shinomiya, G
    Kaneta, A
    Kawakami, Y
    Fujita, S
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 192 (01): : 110 - 116
  • [44] Semipolar Faceting for InGaN-based Polychromatic LEDs
    Funato, Mitsuru
    Kawakami, Yoichi
    2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2013,
  • [45] InGaN/GaN Nanorod and Nanosheet Arrays for InGaN-based LEDs
    Yeh, Ting-Wei
    Dapkus, P. Daniel
    Lin, Yen-Ting
    Stewart, Lawrence
    Ahn, Byungmin
    Nutt, Steven
    2011 IEEE PHOTONICS CONFERENCE (PHO), 2011, : 385 - +
  • [46] Impact of etching conditions on the sidewall quality of InGaN/GaN micro-LEDs investigated by cathodoluminescence imaging
    Wolter, Stefan
    Agluschewitsch, Vladislav
    Wolter, Silke
    Lüßmann, Frederik
    Margenfeld, Christoph
    Schöttler, Georg
    Hartmann, Jana
    Waag, Andreas
    Journal of Applied Physics, 2024, 136 (24)
  • [47] High efficiency InGaN nanowire tunnel junction green micro-LEDs
    Liu, Xianhe
    Sun, Yi
    Malhotra, Yakshita
    Pandey, Ayush
    Wu, Yuanpeng
    Sun, Kai
    Mi, Zetian
    APPLIED PHYSICS LETTERS, 2021, 119 (14)
  • [48] Etching-free pixel definition in InGaN green micro-LEDs
    Liu, Zhiyuan
    Lu, Yi
    Cao, Haicheng
    Garcia, Glen Isaac Maciel
    Liu, Tingang
    Tang, Xiao
    Xiao, Na
    Vazquez, Raul Aguileta
    Nong, Mingtao
    Li, Xiaohang
    LIGHT-SCIENCE & APPLICATIONS, 2024, 13 (01)
  • [49] InGaN-based blue laser diodes
    Nakamura, S
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1997, 3 (03) : 712 - 718
  • [50] Investigations of Sidewall Passivation Using the Sol-Gel Method on the Optoelectronic Performance for Blue InGaN Micro-LEDs
    Huang, Wenjun
    Miao, Xiangyu
    Liu, Zhaojun
    MICROMACHINES, 2023, 14 (03)
12345