Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

被引：0

|

作者：

Farmakis, F.V. ^{[1
]}

Brini, J. ^{[1
]}

Kamarinos, G. ^{[1
]}

Dimitriadis, C.A. ^{[2
]}

Gueorguiev, V.K. ^{[3
]}

Ivanov, Tz.E. ^{[3
]}

机构：

[1] LPCS, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France

[2] Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece

[3] Institute of Solid States Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko shaussee, 1784 Sofia, Bulgaria

来源：

Microelectronics Reliability | / 39卷 / 6-7期

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页码：885 / 889

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