Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

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作者：
Farmakis, F.V. [1 ]
Brini, J. [1 ]
Kamarinos, G. [1 ]
Dimitriadis, C.A. [2 ]
Gueorguiev, V.K. [3 ]
Ivanov, Tz.E. [3 ]
机构：
[1] LPCS, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France
[2] Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece
[3] Institute of Solid States Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko shaussee, 1784 Sofia, Bulgaria
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Microelectronics Reliability | / 39卷 / 6-7期
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页码：885 / 889
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