Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs)

被引：0
|
作者：
Farmakis, F.V. [1 ]
Brini, J. [1 ]
Kamarinos, G. [1 ]
Dimitriadis, C.A. [2 ]
Gueorguiev, V.K. [3 ]
Ivanov, Tz.E. [3 ]
机构：
[1] LPCS, ENSERG, 23 rue des Martyrs, 38016 Grenoble Cedex 1, France
[2] Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece
[3] Institute of Solid States Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko shaussee, 1784 Sofia, Bulgaria
来源：
Microelectronics Reliability | / 39卷 / 6-7期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：885 / 889
相关论文
共 44 条
  • [21] Mechanisms of electrical stress-induced degradation in H2/plasma hydrogenated n- and p-channel polysilicon thin film transistors
    Jeong, Yunsik
    Nagashima, Dai
    Kuwano, Hiroshi
    Nouda, Tomoyuki
    Hamada, Hiroki
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (08): : 5042 - 5047
  • [22] Mechanisms of electrical stress-induced degradation in H2/plasma hydrogenated n- and p-channel polysilicon thin film transistors
    Jeong, Y
    Nagashima, D
    Kuwano, H
    Nouda, T
    Hamada, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (08): : 5042 - 5047
  • [23] ANOMALOUS OFF-CURRENT MECHANISMS IN N-CHANNEL POLY-SI THIN-FILM TRANSISTORS
    MIGLIORATO, P
    REITA, C
    TALLARIDA, G
    QUINN, M
    FORTUNATO, G
    SOLID-STATE ELECTRONICS, 1995, 38 (12) : 2075 - 2079
  • [24] Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
    Lee, Ming-Hsien
    Chang, Kai-Hsiang
    Lin, Horng-Chih
    Journal of Applied Physics, 2007, 101 (05):
  • [25] Spatially and temporally resolving the degradation of n-channel poly-Si thin-film transistors under hot-carrier stressing
    Lee, Ming-Hsien
    Chang, Kai-Hsiang
    Lin, Horng-Chih
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (05)
  • [26] Improved stability of short-channel hydrogenated N-channel polycrystalline silicon thin-film transistors with very thin ECR N2O-plasma gate oxide
    Lee, JW
    Lee, NI
    Han, CH
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (12) : 458 - 460
  • [27] The reduction of the dependence of leakage current on gate bias in metal-induced laterally crystallized p-channel polycrystalline-silicon thin-film transistors by electrical stressing
    Han, Shin-Hee
    Kang, Il-Suk
    Song, Nam-Kyu
    Kim, Min Sun
    Lee, Jang-Sik
    Joo, Seung-Ki
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (09) : 2546 - 2550
  • [28] Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios
    Wang, Zhiming
    Kim, Choongik
    Facchetti, Antonio
    Marks, Tobin J.
    Journal of the American Chemical Society, 2007, 129 (44): : 13362 - 13363
  • [29] Anthracenedicarboximides as air-stable n-channel semiconductors for thin-film transistors with remarkable current on-off ratios
    Wang, Zhiming
    Kim, Choongik
    Facchetti, Antonio
    Marks, Tobin J.
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (44) : 13362 - +
  • [30] Enhanced carrier mobility and electrical stability of n-channel polymer thin film transistors by use of low-k dielectric buffer layer
    Kim, Felix Sunjoo
    Hwang, Do-Kyung
    Kippelen, Bernard
    Jenekhe, Samson A.
    APPLIED PHYSICS LETTERS, 2011, 99 (17)
12345