PRODUCTION MERCURY PROBE CAPACITANCE-VOLTAGE TESTING.

被引：0
|
作者：
Rehrig, D.L.
Pearce, C.W.
机构：
来源：
Semiconductor International | 1980年 / 3卷 / 05期
关键词：
712 Electronic and Thermionic Materials;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The production evaluation of epitaxial layer carrier concentration by mercury probe C-V testing represents a significant improvement over previously used techniques such as control wafers or spreading resistance. Additionally, it provides speed and economy unavailable from C-V test utilizing planar or mesa diodes.
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页码：151 / 162
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