PRODUCTION MERCURY PROBE CAPACITANCE-VOLTAGE TESTING.

被引:0
|
作者
Rehrig, D.L.
Pearce, C.W.
机构
关键词
712 Electronic and Thermionic Materials;
D O I
暂无
中图分类号
学科分类号
摘要
The production evaluation of epitaxial layer carrier concentration by mercury probe C-V testing represents a significant improvement over previously used techniques such as control wafers or spreading resistance. Additionally, it provides speed and economy unavailable from C-V test utilizing planar or mesa diodes.
引用
收藏
页码:151 / 162
相关论文
共 50 条
  • [1] CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY-SILICON DIODE
    SEVERIN, PJ
    POODT, GJ
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (10) : 1384 - &
  • [2] Assessment of Surface Preparation Methods for Mercury (Hg) Probe Schottky Capacitance-Voltage (MCV) on Epitaxial Silicon
    Sanna, Cristina
    Taylor, Patrick
    Hillard, Robert
    Frey, Samuel
    McDonald, Dan
    Hoglund, Jonny
    Zsakai, Gyula
    Marton, Attila
    Horvath, Peter
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2021, 10 (07)
  • [3] An efficient model for accurate capacitance-voltage characterization of high-k gate dielectrics using a mercury probe
    Garros, X
    Leroux, C
    Autran, JL
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2002, 5 (03) : F4 - F6
  • [4] MULTI-CHIP PROBE CARD FOR CAPACITANCE-VOLTAGE MEASUREMENTS.
    Hutchings, K.J.
    Marsin, R.P.
    Peterson, E.L.
    IBM technical disclosure bulletin, 1983, 25 (11 A): : 5736 - 5737
  • [5] CAPACITANCE-VOLTAGE CHARACTERISTICS GAUGE
    GREBENNIKOV, AA
    SUKHAREV, YG
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1976, 19 (02) : 598 - 598
  • [6] Process characterization of law-dose, threshold-voltage adjust channel implants using mercury-probe capacitance-voltage measurements
    Sherbondy, J
    Hillard, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 450 - 453
  • [7] CAPACITANCE-VOLTAGE CHARACTERISTICS OF SUPERLATTICES
    ALESHKIN, VY
    ZVONKOV, BN
    LINKOVA, ER
    MUREL, AV
    ROMANOV, YA
    SEMICONDUCTORS, 1993, 27 (06) : 504 - 507
  • [8] Probe pressure dependence of nanoscale capacitance-voltage characteristic for AlGaN/GaN heterostructures
    Zhang, Jihua
    Zeng, Huizhong
    Zhang, Min
    Liu, Wei
    Zhou, Zuofan
    Chen, Hongwei
    Yang, Chuanren
    Zhang, Wanli
    Li, Yanrong
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2010, 81 (10):
  • [9] Capacitance-voltage spectroscopy of silicon nanodots
    Su, AYK
    Hwang, HL
    Pilkuhn, MH
    Pei, Z
    APPLIED PHYSICS LETTERS, 2005, 86 (06) : 1 - 3
  • [10] Photoelectrochemical capacitance-voltage measurements in GaN
    Stutz, CE
    Mack, M
    Bremser, MD
    Nam, OH
    Davis, RF
    Look, DC
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (05) : L26 - L28