Properties of hydrogenated amorphous silicon prepared by ECR plasma CVD method

被引：0
|
作者：
Kitagawa, Masatoshi [1 ]
Setsune, Kentaro [1 ]
Manabe, Yoshio [1 ]
Hirao, Takashi [1 ]
机构：
[1] Matsushita Electric Industrial Co, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1988年 / 27卷 / 11期
关键词：
Electron Cyclotron Resonance Plasma - Hydrogenated Amorphous Silicon - Infrared Absorption Spectra - Optical Emission Spectra - Optical Gaps - Plasma Chemical Vapor Deposition;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：2026 / 2031
相关论文
共 50 条
  • [21] THERMAL-STABILITY OF HYDROGEN IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    KAMADA, T
    KITAGAWA, M
    SETSUNE, K
    WASA, K
    MATSUDA, A
    TANAKA, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (04): : 528 - 533
  • [22] Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon prepared by plasma deposition
    Yamaguchi, M
    Morigaki, K
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1999, 79 (03): : 387 - 405
  • [23] HYDROGEN CONCENTRATION AND BOND CONFIGURATIONS IN SILICON-NITRIDE FILMS PREPARED BY ECR PLASMA CVD METHOD
    HIRAO, T
    SETSUNE, K
    KITAGAWA, M
    KAMADA, T
    WASA, K
    TSUKAMOTO, K
    IZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (01): : 30 - 34
  • [24] EFFECTS OF IONS ON PROPERTIES OF A-SI-H FILMS PREPARED BY ECR PLASMA CVD METHOD
    AKIYAMA, K
    TANAKA, E
    TAKIMOTO, A
    WATANABE, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1988, 27 (12): : 2192 - 2198
  • [25] ESR STUDY OF SIN FILMS PREPARED BY ECR PLASMA CVD METHOD
    IZUMI, T
    SHIBUYA, M
    HIRAO, T
    KAMADA, T
    MATSUMORI, T
    EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 420 - 422
  • [26] Effects of ions on properties of a-Si:H films prepared by ECR plasma CVD method
    Akiyama, Koji
    Tanaka, Eiichiro
    Takimoto, Akio
    Watanabe, Masanori
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1988, 27 (12): : 2192 - 2198
  • [27] MICROSTRUCTURES OF HYDROGENATED AMORPHOUS-CARBON FILMS PREPARED BY RF PLASMA CVD
    SHIMIZU, H
    NAKAO, S
    KUSAKABE, H
    NODA, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 196 - 198
  • [28] Deposition of hydrogenated nanocrystalline silicon carbide by ECR-CVD
    Rusli
    Yu, MB
    Yoon, SF
    Xu, SJ
    Chew, K
    Ahn, J
    Zhang, Q
    INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 16 (6-7): : 1039 - 1046
  • [29] Tungsten films prepared by ECR plasma CVD
    Akahori, Takashi
    Tani, Takayuki
    Nakayama, Satoshi
    Sumitomo Metals, 1991, 43 (04): : 37 - 43
  • [30] Electrical properties before and after light-soaking of hydrogenated amorphous silicon carbide films prepared by the hydrogen radical CVD method
    Tabata, A
    Kamijo, H
    Suzuoki, Y
    Mizutani, T
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (18) : 2448 - 2453
12345