2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC

被引：0
|
作者：
Spitz, J. [1 ]
Melloch, M.R. [1 ]
Cooper Jr., J.A. [1 ]
Melnychuk, G. [1 ]
Saddow, S.E. [1 ]
机构：
[1] Purdue Univ, West Lafayette, IN, United States
来源：
Annual Device Research Conference Digest | 2000年
关键词：
D O I：
10.1109/drc.2000.877117
中图分类号：
学科分类号：
摘要：
3
引用
收藏
页码：127 / 128
相关论文
共 50 条
  • [21] Performance of 60 A, 1200 V 4H-SiC DMOSFETs
    Hull, Brett A.
    Jonas, Charlotte
    Ryu, Sei-Hyung
    Das, Mrinal
    O'Loughlin, Michael
    Husna, Fatima
    Callanan, Robert
    Richmond, Jim
    Agarwal, Anant
    Palmour, John
    Scozzie, Charles
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 749 - 752
  • [22] Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs
    Ghosh, Amartya
    Hao, Jifa
    Cook, Michael
    Kendrick, Chris
    Suliman, Samia A.
    Hall, Gavin D. R.
    Kopley, Tom
    Awadelkarim, Osama O.
    [J]. 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
  • [23] 4H-SiC DMOSFETs for high speed switching applications
    Ryu, SH
    Krishnaswami, S
    Das, M
    Richmond, J
    Agarwal, A
    Palmour, J
    Scofield, J
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 797 - 800
  • [24] Investigation of On and Off State Characteristics of 4H-SiC DMOSFETs
    Potbhare, Siddharth
    Goldsman, Neil
    Akturk, Akin
    Lelis, Aivars
    Green, Ronald
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 805 - 808
  • [25] High quality interlayer dielectric for 4H-SiC DMOSFETs
    Okayama, T.
    Arthur, S. D.
    Waldrab, P.
    Rao, Mulpuri V.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (11) : 1193 - 1199
  • [26] Self-aligned short-channel vertical power DMOSFETs in 4H-SiC
    Matin, M
    Saha, A
    Cooper, JA
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2, 2004, 457-460 : 1393 - 1396
  • [27] High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
    Cheng, Lin
    Ryu, Sei-Hyung
    Agarwal, Anant K.
    O'Loughlin, Michael
    Burk, Al
    Richmond, Jim
    Lelis, Aivars
    Scozzie, Charles
    Palmour, John W.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1065 - +
  • [28] 1.1 kV 4H-SiC power UMOSFET's
    Agarwal, AK
    Casady, JB
    Rowland, LB
    Valek, WF
    White, MH
    Brandt, CD
    [J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (12) : 586 - 588
  • [29] 10 A, 2.4 kV power DiMOSFETs in 4H-SiC
    Ryu, SH
    Agarwal, A
    Richmond, J
    Palmour, J
    Saks, N
    Williams, J
    [J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (06) : 321 - 323
  • [30] 4kV 4H-SiC epitaxial emitter bipolar junction transistors
    Balachandran, S
    Chow, TP
    Agarwal, A
    Scozzie, C
    Jones, KA
    [J]. PROCEEDINGS OF THE 17TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2005, : 291 - 294
12345