Comparative study of heterostructures InP/GaAs (001) and InP/GaAs (111) grown by metalorganic chemical vapor deposition

被引:0
|
作者
Derbali, M.B.
Meddeb, J.
Maaref, H.
Buttard, D.
Abraham, P.
Monteil, Y.
机构
来源
Journal of Applied Physics | 1998年 / 84卷 / 01期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
下载
收藏
相关论文
共 50 条
  • [21] High quality InP epilayers grown on GaAs substrates using metamorphic AlGaInAs buffers by metalorganic chemical vapor deposition
    Yurun Sun
    Jianrong Dong
    Shuzhen Yu
    Yongming Zhao
    Yang He
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 745 - 749
  • [22] Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructures
    Francesio, L
    Franzosi, P
    Attolini, G
    Pelosi, C
    SOLID STATE COMMUNICATIONS, 1996, 97 (09) : 781 - 783
  • [23] Growth of InP quantum dots on vicinal GaAs (100) substrates by metalorganic chemical vapor deposition
    Zhang, XB
    Heller, RD
    Noh, MS
    Dupuis, RD
    Walter, G
    Holonyak, N
    APPLIED PHYSICS LETTERS, 2003, 83 (03) : 476 - 478
  • [24] HETEROEPITAXIAL GROWTH OF INP ON GAAS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    LEE, MK
    WUU, DS
    TUNG, HH
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3209 - 3211
  • [25] INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    DUPUIS, RD
    CAMPBELL, JC
    VELEBIR, JR
    JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 598 - 605
  • [26] CHARACTERIZATION OF MISMATCHED INAS-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    YORK, PK
    KIELY, CJ
    FERNANDEZ, GE
    BAILLARGEON, JN
    COLEMAN, JJ
    JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 512 - 516
  • [27] Structural and electrical properties of GaSb, AlGaSb and their heterostructures grown on GaAs by metalorganic chemical vapor deposition
    Wang, PY
    Chen, JF
    Chen, WK
    JOURNAL OF CRYSTAL GROWTH, 1996, 160 (3-4) : 241 - 249
  • [28] ELASTIC STRAINS IN CDTE-GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    OLEGO, DJ
    PETRUZZELLO, J
    GHANDHI, SK
    TASKAR, NR
    BHAT, IB
    APPLIED PHYSICS LETTERS, 1987, 51 (02) : 127 - 129
  • [29] Stability investigation of cubic GaN films grown by metalorganic chemical vapor deposition on GaAs (001)
    Sun, XL
    Yang, H
    Zheng, LX
    Xu, DP
    Li, JB
    Wang, YT
    Li, GH
    Wang, ZG
    APPLIED PHYSICS LETTERS, 1999, 74 (19) : 2827 - 2829
  • [30] Heteroepitaxial InP layers grown by metalorganic chemical vapor deposition on novel GaAs on Si buffers obtained by molecular beam epitaxy
    Olego, D.J.
    Tamura, M.
    Okuno, Y.
    Kawano, T.
    Hashimoto, A.
    1600, (71):