Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing

被引：0
|
作者：
机构：
[1] Hurley, P.K.
[2] Stesmans, A.
[3] Afanas'ev, V.V.
[4] O'Sullivan, B.J.
[5] O'Callaghan, E.
来源：
Hurley, P.K. (phurley@nmrc.ie) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [31] Revision of H2 passivation of Pb interface defects in standard (111)Si/SiO2
    Appl Phys Lett, 19 (2723):
  • [32] THERMAL ANNEALING BEHAVIOR OF SI/SIO2 STRUCTURES
    LIFSHITS, VG
    KAVERINA, IG
    KOROBTSOV, VV
    SARANIN, AA
    ZOTOV, AV
    THIN SOLID FILMS, 1986, 135 (01) : 99 - 105
  • [33] RAPID THERMAL ANNEALING OF SIO2 FOR VLSI APPLICATIONS
    PASKALEVA, A
    ATANASSOVA, E
    BESHKOV, G
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 : 35 - 39
  • [34] Rapid thermal annealing of SiO2 for VLSI applications
    J Non Cryst Solids, (35):
  • [35] Effect of Rapid Thermal Annealing Temperature on the Dispersion of Si Nanocrystals in SiO2 Matrix
    Saxena, Nupur
    Kumar, Pragati
    Gupta, Vinay
    PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON CONDENSED MATTER PHYSICS 2014 (ICCMP 2014), 2015, 1661
  • [36] Paramagnetic Pb-type interface defects in thermal (110)Si/SiO2
    Keunen, K.
    Stesmans, A.
    Afanas'ev, V. V.
    APPLIED PHYSICS LETTERS, 2011, 98 (21)
  • [37] Chemical Bonding Configurations at the Interface of SiO2/Si(111)
    Bahari, A.
    Suzban, M.
    Rezai, L.
    Rezai, M.
    Roodbari, M.
    Morgen, P.
    ASIAN JOURNAL OF CHEMISTRY, 2009, 21 (02) : 1609 - 1615
  • [38] REGULAR STEP ARRAYS AT THE SIO2/SI(111) INTERFACE
    JUSKO, O
    MARIENHOFF, P
    HENZLER, M
    APPLIED SURFACE SCIENCE, 1990, 40 (04) : 295 - 302
  • [39] Strain field observed at the SiO2/Si(111) interface
    Emoto, T
    Akimoto, K
    Ichimiya, A
    SURFACE SCIENCE, 1999, 438 (1-3) : 107 - 115
  • [40] Effect of postoxidation annealing on Si/SiO2 interface roughness
    Chen, XD
    Gibson, JM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (08) : 3032 - 3038
12345