Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing

被引：0

作者：

机构：

[1] Hurley, P.K.

[2] Stesmans, A.

[3] Afanas'ev, V.V.

[4] O'Sullivan, B.J.

[5] O'Callaghan, E.

来源：

Hurley, P.K. (phurley@nmrc.ie) | 1600年 / American Institute of Physics Inc.卷 / 93期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

(Edited Abstract)

引用

共 50 条

[21] Electron spin resonance study of the effects of thermal nitridation and reoxidation on Pb centers at (111) Si/SiO2 interfaces
1600, American Inst of Physics, Woodbury, NY, USA (74):
[22] KINETICS OF H-2 PASSIVATION OF PB CENTERS AT THE (111) SI-SIO2 INTERFACE
BROWER, KL
PHYSICAL REVIEW B, 1988, 38 (14): : 9657 - 9666
[23] PASSIVATION OF (111) SI/SIO2 INTERFACE BY FLUORINE
WANG, XW
MA, TP
APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2634 - 2636
[24] O-ENVIRONMENT OF UNPAIRED SI BONDS (PB DEFECTS) AT THE (111)SI/SIO2 INTERFACE
STESMANS, A
VANHEUSDEN, K
PHYSICAL REVIEW B, 1991, 44 (20): : 11353 - 11357
[25] Study of Si nanostructure in SiO2 layer by Si+ implantation and rapid thermal annealing
Lu, FF
Lin, TH
Kao, CH
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (7A): : 4443 - 4446
[26] Study of Si nanostructure in SiO2 layer by Si+ implantation and rapid thermal annealing
Lu, Fu-Fa
Lin, Tung-Hsien
Kao, Chin-Hsing
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2004, 43 (7 A): : 4443 - 4446
[27] INTRINSIC STRESS AND STRESS GRADIENTS AT THE SIO2/SI INTERFACE IN STRUCTURES PREPARED BY THERMAL-OXIDATION OF SI AND SUBJECTED TO RAPID THERMAL ANNEALING
FITCH, JT
BJORKMAN, CH
LUCOVSKY, G
POLLAK, FH
YIN, X
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04): : 775 - 781
[28] Dissociation kinetics of hydrogen-passivated Pb defects at the (111)Si/SiO2 interface
Stesmans, A
PHYSICAL REVIEW B, 2000, 61 (12): : 8393 - 8403
[29] A CRITICAL-ASSESSMENT OF THE OVERCOORDINATION MODEL FOR THE PB CENTER AT THE (111)SI/SIO2 INTERFACE
EDWARDS, AH
APPLIED SURFACE SCIENCE, 1989, 39 (1-4) : 309 - 316
[30] Periodic changes in SiO2/Si(111) interface structures with progress of thermal oxidation
Ohishi, Kazuaki, 1600, JJAP, Minato-ku, Japan (33):

← 1 2 3 4 5 →