RAPID THERMAL ANNEALING OF SIO2 FOR VLSI APPLICATIONS

被引：2
|
作者：
PASKALEVA, A
ATANASSOVA, E
BESHKOV, G
机构：
[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, 1784
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00107-7
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The influence of the rapid thermal annealing (RTA) in vacuum on the properties of thermally grown SiO2 has been investigated by means of high field Fowler-Nordheim tunneling injection. The results indicate that the RTA process anneals the original electron traps existing in as-grown oxides while also introducing positive charge manifested as electron traps. The dependence of these charges on the annealing temperature (1073-1473 K) is a strong function of the technological history of the samples.
引用
收藏
页码：35 / 39
页数：5
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