INVESTIGATION OF ISOCHRONOUS ANNEALING OF P-TYPE InSb IRRADIATED WITH MODERATE-ENERGY IONS.

A comparison was made of the results of bombardment of indium antimonide with inert-gas ions (Ar, Xe), and with donor (S, Te) and acceptor (Zn, Cd) impurities of energies 32-80 keV. A study was made of isochronous annealing of lightly doped (N//a-N//d similar 10**1**2-10**1**3 cm** minus **3) p-type InSb irradiated with S, Ar, Zn, and Te ions. The radiation defects formed as a result of bombardment at room temperature did not alter the type of conduction of p-type InSb doped with manganese and iron, in contrast to p-type InSb doped with germanium. Chemical doping with sulfur and tellurium occurred only in a certain range of radiation doses (Q approximately equals 6 multiplied by 10**1**5 minus 6 multiplied by 10**1**6 cm** minus **2) and impurity concentrations in the lightly doped material (N//a-N//d less than 10**1**3 cm** minus **3 in the case of p-type InSb:Mn and N//a-N//d less than 5 multiplied by 10**1**3 cm** minus **3 in the case of p-type InSb:Ge). It was found that p-type InSb irradiated with argon ions was characterized by the same stages and activation energies of isochronous annealing as neutron-irradiated n-type InSb.