Microstructural investigation and magnetic properties of p-type GaN implanted with Mn+ ions

被引：0
|
作者：
Baik, JM
Kim, JK
Jang, HW
Shon, Y
Kang, TW
Lee, JL [1 ]
机构：
[1] Pohang Univ Sci & Technol, Pohang 790784, Kyungbuk, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Chung Ku, Seoul 100715, South Korea
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2002年 / 234卷 / 03期
关键词：
D O I：
10.1002/1521-3951(200212)234:3<943::AID-PSSB943>3.0.CO;2-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In p-type GaN implanted with 5 x 10(16) cm(-2) dose of Mn+ ions, magnetization data after annealing showed ferromagnetic behavior at 10 K. The ferromagnetic signal for the sample annealed at 800 degreesC was stronger than the one at 900 degreesC, because of the predominant reaction of Mn with N atoms at 900 degreesC and the increase of the electron concentration with increasing annealing temperature. This suggests that ferromagnetism in Mn-implanted p-type GaN can be enhanced by optimising annealing temperature (< 900 degreesC).
引用
收藏
页码：943 / 946
页数：4
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