Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

被引:66
|
作者
Baik, JM [1 ]
Jang, HW [1 ]
Kim, JK [1 ]
Lee, JL [1 ]
机构
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea
关键词
D O I
10.1063/1.1541111
中图分类号
O59 [应用物理学];
学科分类号
摘要
A dilute magnetic semiconductor was achieved by implanting Mn ions into p-type GaN and subsequent annealing. The ferromagnetic property was obtained after annealing at 800 degreesC. This was attributed to the formation of Ga-Mn magnetic phases. Higher temperature annealing at 900 degreesC reduced the ferromagnetic signal and produced antiferromagnetic Mn-N compounds such as Mn6N2.58 and Mn3N2, leaving N vacancies. This provides evidence that N vacancies play a critical role in weakening the ferromagnetic property in the Mn-implanted GaN. (C) 2003 American Institute of Physics.
引用
收藏
页码:583 / 585
页数:3
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