The effects of implanted nitrogen ions on the magnetic properties of Mn-implanted GaN

被引：0
|
作者：
Jeong Min Baik
Jong-Lam Lee
机构：
[1] Pohang University of Science and Technology (POSTECH),Department of Materials Science and Engineering
来源：
Metals and Materials International | 2004年 / 10卷
关键词：
(Ga,Mn)N; ion implantation; ferromagnetic semiconductor; SRPES;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effects of implanted N ions on the magnetic properties of Mn-implanted GaN were studied. The ferromagnetic signal increased when N ions were implanted into GaN prior to the implantation of Mn ions and annealed at 900°C. Synchrotron radiation photoemission spectroscopy revealed that the Ga−Mn magnetic phases contributing to ferromagnetic properties increased. Mn−N binary phases such as Mn6N258 and Mn3N2 decreased and sheet resistivity significantly increased, indicating a reduction of N-vacancies. Consequently, it is suggested that the enhancement of the ferromagnetic properties in (Mn+N)-implanted GaN originated from the decrease of N-vacancies and the increase of Ga−Mn magnetic phases.
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页码：555 / 558
页数：3
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