Influence of moderate temperature annealing on surface Fermi level in p-type InP: X-ray photoemission study

被引：0

作者：

Sakai, M ^{[1
]}

Shibata, D ^{[1
]}

Takakuwa, A ^{[1
]}

Saito, Y ^{[1
]}

机构：

[1] Saitama Univ, Fac Engn, Dept Funct Mat Sci, Sakura Ku, Urawa, Saitama 3388570, Japan

来源：

2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2004年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Influence of annealing on the surface band bending potential V, in p-type (100) InP wafer has been investigated by X-ray photoelectron spectroscopy (XPS) as well as photoreflectance(PR). Our previous optical observation of the 220 degrees C annealing-induced abrupt change in V, was also observed by the present XPS study, although X-ray irradiation due to XPS affects strongly V, of the sample annealed at temperatures below 200 degrees C and above 300 degrees C. In addition, it is shown that annealing at 220 degrees C causes an abrupt change in the chemical shift of near surface In atoms. A phenomenological explanation for the mechanism of the Fermi level pinning at (100) InP surface will be proposed.

引用

页码：130 / 133

页数：4

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