Investigation of substrate orientation dependence for the growth of GaN on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor-phase epitaxy

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作者：
Kumagai, Yoshinao [1 ]
Koukitu, Akinori [1 ]
Seki, Hisashi [1 ]
机构：
[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan
来源：
| 1600年 / JJAP, Japan卷 / 39期
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