Formation of cubic GaN on (111)B GaAs by metal-organic vapor-phase epitaxy with dimethylhydrazine

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[1] Kuwano, Noriyuki
[2] Kobayashi, Kenki
[3] Oki, Kensuke
[4] Miyoshi, Seiro
[5] Yaguchi, Hiroyuki
[6] Onabe, Kentaro
[7] Shiraki, Yasuhiro
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Kuwano, Noriyuki | 1600年 / JJAP, Minato-ku, Japan卷 / 33期
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Semiconducting gallium compounds;
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