Investigation of substrate orientation dependence for the growth of GaN on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor-phase epitaxy

被引：0

作者：

Kumagai, Yoshinao ^{[1
]}

Koukitu, Akinori ^{[1
]}

Seki, Hisashi ^{[1
]}

机构：

[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan

来源：

| 1600年 / JJAP, Japan卷 / 39期

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