共 50 条
- [43] ABSORPTION OF LIGHT ASSISTED BY EQUILIBRIUM OPTICAL PHONONS IN GALLIUM ARSENIDE. [J]. 1978, 12 (10): : 1143 - 1145
- [44] CALCULATION OF THE HOMOGENEITY RANGE OF TIN-DOPED GALLIUM ARSENIDE. [J]. Neorganiceskie materialy, 1987, 23 (09): : 1429 - 1433
- [45] CHROMIUM AND IRON IMPURITIES IN LIQUID ENCAPSULATED CZOCHRALSKI GALLIUM ARSENIDE. [J]. 1600, (53):
- [46] Polarographic and Photometric Determination of Iodides at Trace Levels in Gallium Arsenide. [J]. Chemicky prumysl, 1986, 36 (04): : 184 - 187
- [47] INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION OF RADIATION DEFECTS IN GALLIUM ARSENIDE. [J]. 1982, V 16 (N 5): : 586 - 587
- [48] CAPTURE OF HOLES BY CHROMIUM IMPURITY CENTER IN SEMIINSULATING GALLIUM ARSENIDE. [J]. Soviet physics. Semiconductors, 1980, 14 (07): : 788 - 790
- [50] On a nickel arsenide. [J]. COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1900, 130 : 914 - 915