INFLUENCE OF AN ELECTRIC FIELD ON THE ACCUMULATION OF RADIATION DEFECTS IN GALLIUM ARSENIDE.

被引：0

作者：

MANONTOV, A.P.

PESHEV, V.V.

机构：

来源：

| 1982年 / V 16卷 / N 5期

关键词：

D O I：

暂无

中图分类号：

TM2 [电工材料]; TN [电子技术、通信技术];

学科分类号：

0805 ; 080502 ; 080801 ; 0809 ;

摘要：

THE KINETICS OF FORMATION OF RADIATION DEFECTS IN SPACE-CHARGE REGIONS AND IN THE BULK OF GALLIUM ARSENIDE IRRADIATED WITH ″GAMMA″ RAYS HAVE BEEN INVESTIGATED. IT WAS FOUND THAT THE RATES OF ACCUMULATION OF THE E2 AND E3 CENTERS IN THE SPACE-CHARGE REGION DIFFERED FROM THE RATES OF ACCUMULATION OF THE SAME CENTERS IN THE BULK OF GAAS.

引用

页码：586 / 587

共 50 条

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