Performance of current-in-plane pseudo-spin-valve devices on CMOS silicon-on-insulator underlayers

被引：0
|
作者：
机构：
[1] Katti, R.R.
[2] Zou, D.
[3] Reed, D.
[4] Schipper, D.
[5] Hynes, O.
[6] Shaw, G.
[7] Kaakani, H.
来源：
Katti, R.R. (romney.katti@honeywell.com) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词：
CMOS integrated circuits - Data storage equipment - Electric currents - Giant magnetoresistance - Switching;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Performance of current-in-plane (CIP) pseudo-spin-valve (PSV) devices on CMOS silicon-on-insulator underlayers was investigated. Reading and writing field for selected devices were shown to be approximately 25%-50% that of unselected devices. It provided a margin for reading and writing specific bits in a memory without overwriting bits and without disturbing other bits.
引用
收藏
相关论文
共 47 条
  • [41] Fully quantum-mechanical calculation of gate tunneling current in ultrathin silicon-on-insulator metal-oxide-semiconductor devices
    Iwata, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (6B): : L600 - L602
  • [42] EFFECT OF POST-OXYGEN-IMPLANT ANNEALING TEMPERATURE ON THE CHANNEL MOBILITIES OF CMOS DEVICES IN OXYGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES.
    Mao, Bor-Yen
    Matloubian, Mishel
    Chen, Cheng-Eng
    Sundaresan, R.
    Slawinski, C.
    Electron device letters, 1987, EDL-8 (07): : 306 - 308
  • [43] Impact of improved high-performance Si(110)-oriented metal-oxide- semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices
    Cheng, Weitao
    Teramoto, Akinobu
    Hirayama, Masaki
    Sugawa, Shigetoshi
    Ohmi, Tadahiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (4 B): : 3110 - 3116
  • [44] Ultra shallow and abrupt n+-p junction formations on silicon-on-insulator by solid phase diffusion of arsenic from spin-on-dopant for sub 50 nm Si metal-oxide-semiconductor devices
    Oh, J
    Im, K
    Ahn, CG
    Yang, JH
    Cho, WJ
    Lee, S
    Park, K
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 110 (02): : 185 - 189
  • [45] Impact of improved high-performance Si(110)-oriented metal-oxide-semiconductor field-effect transistors using accumulation-mode fully depleted silicon-on-insulator devices
    Cheng, Weitao
    Teramoto, Akinobu
    Hirayama, Masaki
    Sugawa, Shigetoshi
    Ohmi, Tadahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 3110 - 3116
  • [46] Large magnetoresistance in current-perpendicular-to-plane pseudo spin valve using a Co2Fe(Ge0.5Ga0.5) Heusler alloy (vol 98, 152501, 2011)
    Takahashi, Y. K.
    Srinivasan, A.
    Varaprasad, B.
    Rajanikanth, A.
    Hase, N.
    Nakatani, T. M.
    Kasai, S.
    Furubayashi, T.
    Hono, K.
    APPLIED PHYSICS LETTERS, 2011, 98 (18)
  • [47] Current-perpendicular-to-plane giant magnetoresistive properties in Co2Mn(Ge0.75Ga0.25)/Cu2TiAl/Co2Mn(Ge0.75Ga0.25) all-Heusler alloy pseudo spin valve
    Li, S.
    Takahashi, Y. K.
    Sakuraba, Y.
    Chen, J.
    Furubayashi, T.
    Mryasov, O.
    Faleev, S.
    Hono, K.
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (09)
12345